Giant supercurrent states in a superconductor-InAs/GaSb-superconductor junction

Shi, Xiaoyan; Yu, Wenlong; Jiang, Zhigang; Berniverg, B. Andrei; Pan, Wei; Hawkins, Samuel D.; Klem, John F.

doi:10.1063/1.4932644

Giant supercurrent states in a superconductor-InAs/GaSb-superconductor junction

Journal Article · Wed Oct 07 00:00:00 EDT 2015 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4932644· OSTI ID:1497657

^[1]; Yu, Wenlong ^[2]; Jiang, Zhigang ^[2]; Berniverg, B. Andrei ^[3]; Pan, Wei ^[1]; Hawkins, Samuel D. ^[1]; Klem, John F. ^[1]

Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Georgia Inst. of Technology, Atlanta, GA (United States)
Princeton Univ., NJ (United States)

We report that superconductivity in topological materials has attracted a great deal of interest in both electron physics and material sciences since the theoretical predictions that Majorana fermions can be realized in topological superconductors. Topological superconductivity could be realized in a type II, band-inverted, InAs/GaSb quantum well if it is in proximity to a conventional superconductor. Here, we report observations of the proximity effect induced giant supercurrent states in an InAs/GaSb bilayer system that is sandwiched between two superconducting tantalum electrodes to form a superconductor-InAs/GaSb-superconductor junction. Lastly, electron transport results show that the supercurrent states can be preserved in a surprisingly large temperature-magnetic field (T – H) parameter space. In addition, the evolution of differential resistance in T and H reveals an interesting superconducting gap structure.

View Accepted Manuscript (DOE)

Research Organization:: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States); Sandia National Laboratories, Livermore, CA

Sponsoring Organization:: USDOE; USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division

Grant/Contract Number:: AC04-94AL85000; AC52-06NA25396

OSTI ID:: 1497657

Alternate ID(s):: OSTI ID: 1502902
OSTI ID: 1420481
OSTI ID: 22492771

Report Number(s):: SAND--2014-19055J; 672380

Journal Information:: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 13 Vol. 118; ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Fabrication and Characterization of Superconducting Films for Superconductor-Topological Insulator Hybrid Devices Zhang, Xurui; Shi, Xiaoyan Journal of Superconductivity and Novel Magnetism, Vol. 33, Issue 1 https://doi.org/10.1007/s10948-019-05283-6	journal	September 2019
Single-edge transport in an InAs/GaSb quantum spin Hall insulator Couëdo, François; Irie, Hiroshi; Suzuki, Kyoichi Physical Review B, Vol. 94, Issue 3 https://doi.org/10.1103/physrevb.94.035301	journal	July 2016
Probing the semiconductor to semimetal transition in InAs/GaSb double quantum wells by magneto-infrared spectroscopy Jiang, Y.; Thapa, S.; Sanders, G. D. Physical Review B, Vol. 95, Issue 4 https://doi.org/10.1103/physrevb.95.045116	journal	January 2017
Detection of Majorana Kramers Pairs Using a Quantum Point Contact Li, Jian; Pan, Wei; Bernevig, B. Andrei Physical Review Letters, Vol. 117, Issue 4 https://doi.org/10.1103/physrevlett.117.046804	journal	July 2016
Topological Majorana Two-Channel Kondo Effect Bao, Zhi-qiang; Zhang, Fan Physical Review Letters, Vol. 119, Issue 18 https://doi.org/10.1103/physrevlett.119.187701	journal	October 2017
π and 4 π Josephson Effects Mediated by a Dirac Semimetal Yu, W.; Pan, W.; Medlin, D. L. Physical Review Letters, Vol. 120, Issue 17 https://doi.org/10.1103/physrevlett.120.177704	journal	April 2018
Topological Majorana Two-Channel Kondo Effect Bao, Zhi-qiang; Zhang, Fan arXiv https://doi.org/10.48550/arxiv.1607.04303	text	January 2016

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