Temperature scaling in the quantum-Hall-effect regime in a HgTe quantum well with an inverted energy spectrum
- Russian Academy of Sciences, Mikheev Institute of Metal Physics, Ural Branch (Russian Federation)
- Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation)
The longitudinal and Hall magnetoresistances of HgTe/HgCdTe heterostructures with an inverted energy spectrum (the HgTe quantum well width is d = 20.3 nm) are measured in the quantum-Hall-effect regime at T = 2–50 K in magnetic fields up to B = 9 T. Analysis of the temperature dependences of conductivity in the transition region between the first and second plateaus of the quantum Hall effect shows the feasibility of the scaling regime for a plateau–plateau quantum phase transition in 2D-structures on the basis of mercury telluride.
- OSTI ID:
- 22469666
- Journal Information:
- Semiconductors, Journal Name: Semiconductors Journal Issue: 12 Vol. 49; ISSN SMICES; ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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