Method and apparatus for use of III-nitride wide bandgap semiconductors in optical communications
Patent
·
OSTI ID:970387
- Lenexa, KS
- Manhattan, KS
The present disclosure relates to the use of III-nitride wide bandgap semiconductor materials for optical communications. In one embodiment, an optical device includes an optical waveguide device fabricated using a III-nitride semiconductor material. The III-nitride semiconductor material provides for an electrically controllable refractive index. The optical waveguide device provides for high speed optical communications in an infrared wavelength region. In one embodiment, an optical amplifier is provided using optical coatings at the facet ends of a waveguide formed of erbium-doped III-nitride semiconductor materials.
- Research Organization:
- National Science Foundation
- Sponsoring Organization:
- United States Department of Energy
- DOE Contract Number:
- FG03-96ER45604
- Assignee:
- University of Kansas (Lawrence, KS)
- Patent Number(s):
- 7,345,812
- Application Number:
- 10/783,972
- OSTI ID:
- 970387
- Country of Publication:
- United States
- Language:
- English
GaN linear electro‐optic effect
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journal | September 1995 |
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