Method and apparatus for use of III-nitride wide bandgap semiconductors in optical communications
Patent
·
OSTI ID:970387
- Lenexa, KS
- Manhattan, KS
The present disclosure relates to the use of III-nitride wide bandgap semiconductor materials for optical communications. In one embodiment, an optical device includes an optical waveguide device fabricated using a III-nitride semiconductor material. The III-nitride semiconductor material provides for an electrically controllable refractive index. The optical waveguide device provides for high speed optical communications in an infrared wavelength region. In one embodiment, an optical amplifier is provided using optical coatings at the facet ends of a waveguide formed of erbium-doped III-nitride semiconductor materials.
- Research Organization:
- National Science Foundation
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- FG03-96ER45604
- Assignee:
- University of Kansas (Lawrence, KS)
- Patent Number(s):
- 7,345,812
- Application Number:
- 10/783,972
- OSTI ID:
- 970387
- Country of Publication:
- United States
- Language:
- English
GaN linear electro‐optic effect
|
journal | September 1995 |
Similar Records
Optical and electrical properties of III-V nitride wide bandgap semiconductors. Annual report, April 1, 1997--May 31, 1998
Intersubband transitions in nonpolar and semipolar III-nitrides: Materials, devices, and applications
Wide bandgap semiconductor materials and devices
Technical Report
·
Mon Jun 01 00:00:00 EDT 1998
·
OSTI ID:970387
Intersubband transitions in nonpolar and semipolar III-nitrides: Materials, devices, and applications
Journal Article
·
Tue Jun 07 00:00:00 EDT 2022
· Journal of Applied Physics
·
OSTI ID:970387
+1 more
Wide bandgap semiconductor materials and devices
Journal Article
·
Fri Jun 17 00:00:00 EDT 2022
· Journal of Applied Physics
·
OSTI ID:970387