Stoichiometry optimization of homoepitaxial oxide thin films using x-ray diffraction.

Journal Article · Mon Oct 05 04:00:00 EDT 2009 · Appl. Phys. Lett.

DOI:https://doi.org/10.1063/1.3243696· OSTI ID:967949

LeBeau, J M; Engel-Herbert, R; Jalan, B; Cagnon, J; Moetakef, P; Stemmer, S; Stephenson, G B

Homoepitaxial SrTiO{sub 3} thin films grown by molecular beam epitaxy are analyzed using high-resolution x-ray diffraction and transmission electron microscopy. Measured 00L x-ray scans from stoichiometric and nonstoichiometric films are compared with calculations that account for the effects of film thickness, lattice parameter, fractional site occupancy, and an offset between film and substrate at the interface. It is found that thickness fringes, commonly observed around Bragg reflections even in stoichiometric homoepitaxial SrTiO{sub 3} films, arise from a film/substrate interface offset. Transmission electron microscopy studies confirm the presence of strain at those homoepitaxial interfaces that show an offset in x-ray diffraction. The consequences for stoichiometry optimization of homoepitaxial films using high-resolution x-ray diffraction and the quality of regrown oxide interfaces are discussed.

• Research Organization: Argonne National Laboratory (ANL)
• Sponsoring Organization: SC; NSF
• DOE Contract Number: AC02-06CH11357
• OSTI ID: 967949
• Report Number(s): ANL/MSD/JA-65011
• Journal Information: Appl. Phys. Lett., Journal Name: Appl. Phys. Lett. Journal Issue: Oct. 5, 2009 Vol. 95; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: ENGLISH

Related Subjects

36 MATERIALS SCIENCE
BRAGG REFLECTION
LATTICE PARAMETERS
MOLECULAR BEAM EPITAXY
OPTIMIZATION
OXIDES
STOICHIOMETRY
STRAINS
SUBSTRATES
THICKNESS
THIN FILMS
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION