Growth of homoepitaxial SrTiO{sub 3} thin films by molecular-beam epitaxy

Journal Article · Mon Apr 20 04:00:00 EDT 2009 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3117365· OSTI ID:21294049

Brooks, C M ^[1]; Kourkoutis, L Fitting; Muller, D A ^[2]; Heeg, T; Schlom, D G ^[1]; Schubert, J ^[3]

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1. Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853-1501 (United States)
2. School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853 (United States)
3. Institute of Bio- and Nanosystems, IBN-1, Forschungszentrum Juelich GmbH and Juelich-Aachen Research Alliance, JARA-FIT, Juelich 52425 (Germany)

We report the structural properties of homoepitaxial (100) SrTiO{sub 3} films grown by reactive molecular-beam epitaxy (MBE). The lattice spacing and x-ray diffraction (XRD) rocking curves of stoichiometric MBE-grown SrTiO{sub 3} films are indistinguishable from the underlying SrTiO{sub 3} substrates. Off-stoichiometry for both strontium-rich and strontium-poor compositions (i.e., Sr{sub 1+x}TiO{sub 3+{delta}} films with -0.2<x<0.2) results in lattice expansion with significant changes to the shuttered reflection high-energy electron diffraction oscillations, XRD, and film microstructure. The dependence of lattice spacing on nonstoichiometry is smaller for MBE-grown films than for homoepitaxial (100) Sr{sub 1+x}TiO{sub 3+{delta}} films prepared by pulsed-laser deposition or sputtering.

• OSTI ID: 21294049
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 16 Vol. 94; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL GROWTH
ELECTRON DIFFRACTION
ENERGY BEAM DEPOSITION
LASER RADIATION
LAYERS
MICROSTRUCTURE
MOLECULAR BEAM EPITAXY
NEUTRON DIFFRACTION
PULSED IRRADIATION
REFLECTION
SPUTTERING
STOICHIOMETRY
STRONTIUM
STRONTIUM TITANATES
SUBSTRATES
THIN FILMS
X-RAY DIFFRACTION