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Stoichiometry of LaAlO{sub 3} films grown on SrTiO{sub 3} by pulsed laser deposition

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.4811821· OSTI ID:22122809
; ;  [1]; ; ; ; ;  [2]
  1. Department of Physics, Temple University, Philadelphia, Pennsylvania 19122 (United States)
  2. Department of Materials Science and Engineering, Drexel University, Philadelphia, Pennsylvania 19104 (United States)
We have studied the stoichiometry of epitaxial LaAlO{sub 3} thin films on SrTiO{sub 3} substrate grown by pulsed laser deposition as a function of laser energy density and oxygen pressure during the film growth. Both x-ray diffraction ({theta}-2{theta} scan and reciprocal space mapping) and transmission electron microscopy (geometric phase analysis) revealed a change of lattice constant in the film with the distance from the substrate. Combined with composition analysis using x-ray fluorescence we found that the nominal unit-cell volume expanded when the LaAlO{sub 3} film was La-rich, but remained near the bulk value when the film was La-poor or stoichiometric. La excess was found in all the films deposited in oxygen pressures lower than 10{sup -2} Torr. We conclude that the discussion of LaAlO{sub 3}/SrTiO{sub 3} interfacial properties should include the effects of cation off-stoichiometry in the LaAlO{sub 3} films when the deposition is conducted under low oxygen pressures.
OSTI ID:
22122809
Journal Information:
Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 2 Vol. 114; ISSN JAPIAU; ISSN 0021-8979
Country of Publication:
United States
Language:
English