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In situ transmission electron microscopy study of irradiation induced dewetting of ultrathin Pt films.

Journal Article · · J. Appl. Phys.
DOI:https://doi.org/10.1063/1.1527712· OSTI ID:961227
Irradiation induced dewetting of 3--10 nm Pt thin films from SiO{sub 2} and SiN{sub x} substrates is studied using real-time in situ transmission electron microscopy (TEM). Fissures in the initial films form dry patches, which serve as nuclei for the dewetting process. Upon 800 keV Kr{sup ++} irradiation, the dry patches undergo filling-in, growth and coalescence. The dose range for these three stages of dewetting depends on the film thickness. Due to the effects of line tension, the growth of fissures is anisotropic, turning elongated fissures into rounded ones. The evolution of the area and width of individual fissures was extracted from a sequence of TEM images for 3 nm Pt/SiO{sub 2} under 800 keV Kr{sup ++} irradiation. We calculate the average velocity of receding contact lines to be -0.55{+-}0.2 m/s during the thermal spike.
Research Organization:
Argonne National Laboratory (ANL)
Sponsoring Organization:
SC; NSF; OUS
DOE Contract Number:
AC02-06CH11357
OSTI ID:
961227
Report Number(s):
ANL/MSD/JA-45548
Journal Information:
J. Appl. Phys., Journal Name: J. Appl. Phys. Journal Issue: 1 ; Jan. 1, 2003 Vol. 93; ISSN JAPIAU; ISSN 0021-8979
Country of Publication:
United States
Language:
ENGLISH

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