Mapping Local Strain in Thin Film/Substrate Systems using X-ray
The authors report experimental data and modeling results for reflection microbeam x-ray topographs from a Si substrate strained by an overlying pseudomorphic SiGe film edge. The diffracted x-ray intensity from the Si substrate is strongly asymmetric as a function of distance from the film edge. A model of the diffracted intensity based on the classical Ewald-von Laue dynamical diffraction theory for an antisymmetric strain distribution indicates that the asymmetry in the diffracted beam profile is only due to the scattering process; individual intensity maxima in the intensity profile cannot be uniquely ascribed to individual features in the local strain distribution.
- Research Organization:
- Brookhaven National Lab. (BNL), Upton, NY (United States). National Synchrotron Light Source
- Sponsoring Organization:
- Doe - Office Of Science
- DOE Contract Number:
- DE-AC02-98CH10886
- OSTI ID:
- 959622
- Report Number(s):
- BNL-82608-2009-JA; APPLAB; TRN: US201016%%766
- Journal Information:
- Applied Physics Letters, Vol. 90; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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