Local Strain Distributions in Silicon-on-Insulator/Stressor-Film Composites

Journal Article · Tue Jan 01 00:00:00 EST 2008 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.2975992· OSTI ID:959701

Kalenci, O; Murray, C; Noyan, I

We have used scanning microdiffraction topography to determine the mismatch strains and local strain distributions in silicon-on-insulator substrates with overlying thin film stressor features. Analysis of the data using the edge-force model and the Ewald-von Laue dynamical diffraction theory shows the presence of an exponential strain gradient in the vicinity of the buried SiO2/Si-substrate interface. We show that, for simple geometries, it is possible to deduce the sign of the mismatch strain simply by inspecting the microdiffraction topograph.

• Research Organization: Brookhaven National Lab. (BNL), Upton, NY (United States). National Synchrotron Light Source
• Sponsoring Organization: Doe - Office Of Science
• DOE Contract Number: DE-AC02-98CH10886
• OSTI ID: 959701
• Report Number(s): BNL-82687-2009-JA; JAPIAU; TRN: US201016%%845
• Journal Information: Journal of Applied Physics, Vol. 104; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
DIFFRACTION
STRAINS
SUBSTRATES
THIN FILMS
TOPOGRAPHY
COMPOSITE MATERIALS
national synchrotron light source