Dislocation engineering in SiGe on periodic and aperiodic Si(001) templates studied by fast scanning X-ray nanodiffraction

Journal Article · Mon Jan 13 00:00:00 EST 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4862688· OSTI ID:22275688

Mondiali, Valeria; Cecchi, Stefano; Chrastina, Daniel ^[1]; Bollani, Monica ^[2]; Richard, Marie-Ingrid ^[3]; Schülli, Tobias; Chahine, Gilbert ^[3]

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1. L-NESS, Dipartimento di Fisica, Politecnico di Milano, Polo di Como, via Anzani 42, 22100 Como (Italy)
2. IFN-CNR, L-NESS, via Anzani 42, 22100 Como (Italy)
3. ID01/ESRF, BP 220, F-38043 Grenoble Cedex (France)

Fast-scanning X-ray nanodiffraction microscopy is used to directly visualize the misfit dislocation network in a SiGe film deposited on a pit-patterned Si substrate at the beginning of plastic relaxation. X-ray real-space diffracted intensity maps are compared to topographic atomic force microscopy images, in which crosshatch lines can be seen. The change in intensity distribution as a function of the incidence angle shows localized variations in strain within the SiGe film. These variations, which reflect the order imposed by the substrate pattern, are attributed to the presence of both bunches of misfit dislocations and defect-free regions.

• OSTI ID: 22275688
• Journal Information: Applied Physics Letters, Vol. 104, Issue 2; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ATOMIC FORCE MICROSCOPY
DISLOCATIONS
GERMANIUM SILICIDES
INCIDENCE ANGLE
PERIODICITY
SUBSTRATES