Dislocation engineering in SiGe heteroepitaxial films on patterned Si (001) substrates

Journal Article · Mon Mar 21 04:00:00 EDT 2011 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3569145· OSTI ID:21518335

Gatti, R; Boioli, F; Montalenti, F; Miglio, Leo ^[1]; Grydlik, M; Brehm, M; Groiss, H; Glaser, M; Fromherz, T; Schaeffler, F ^[2]

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1. L-NESS and Dipartimento di Scienza dei Materiali, Universita degli Studi di Milano-Bicocca, via R. Cozzi 53, I-20125 Milano (Italy)
2. Institut fuer Halbleiter- und Festkoerperphysik, Johannes Kepler Universitaet, Altenberger Str. 69, A-4040 Linz (Austria)

We demonstrate dislocation engineering without oxide masks. By using finite element simulations we show how nanopatterning of Si substrates with (111) trenches provides anisotropic elastic relaxation in a SiGe film, generates preferential nucleation sites for dislocation loops, and allows for dislocation trapping, leaving wide areas free of threading dislocations. These predictions are confirmed by atomic force and transmission electron microscopy performed on overcritical Si{sub 0.7}Ge{sub 0.3} films. These were grown by molecular beam epitaxy on a Si(001) substrate patterned with periodic arrays of selectively etched (111)-terminated trenches.

• OSTI ID: 21518335
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 12 Vol. 98; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALLOYS
ANISOTROPY
ATOMIC FORCE MICROSCOPY
CALCULATION METHODS
CHALCOGENIDES
CRYSTAL DEFECTS
CRYSTAL GROWTH
CRYSTAL GROWTH METHODS
CRYSTAL STRUCTURE
DISLOCATIONS
ELASTICITY
ELECTRON MICROSCOPY
EPITAXY
FILMS
FINITE ELEMENT METHOD
GERMANIUM ALLOYS
GERMANIUM COMPOUNDS
GERMANIUM SILICIDES
LINE DEFECTS
MATERIALS
MATHEMATICAL SOLUTIONS
MECHANICAL PROPERTIES
MICROSCOPY
MOLECULAR BEAM EPITAXY
NUCLEATION
NUMERICAL SOLUTION
OXIDES
OXYGEN COMPOUNDS
RELAXATION
SEMICONDUCTOR MATERIALS
SILICIDES
SILICON ALLOYS
SILICON COMPOUNDS
SIMULATION
SUBSTRATES
TRANSMISSION ELECTRON MICROSCOPY
TRAPPING