Spectroscopic Studies of Electronically Active Defects in Transition Metal Oxides for Advanced Si Devices
Conference
·
· AIP Conf.Proc.882:364,2007
OSTI ID:953926
Based on spectroscopic studies, and guided by ab initio theory, the electron and hole traps in HfO2 and other transition metal elemental oxides e.g., TiO2, are assigned to O-atom divacancies, clustered at internal grain boundaries. Engineering solutions for defect reduction are identified: (i) deposition of ultra-thin, < 2 nm HfO2 and phase separated Hf silicate dielectrics, in which grain boundary formation is suppressed by effectively eliminating inter-primitive unit cell {pi}-bonding interactions, and (ii) non-crystalline Zr/Hf Si oxynitrides without nanocrystalline grain boundaries.
- Research Organization:
- Stanford Linear Accelerator Center (SLAC)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC02-76SF00515
- OSTI ID:
- 953926
- Report Number(s):
- SLAC-REPRINT-2009-466
- Journal Information:
- AIP Conf.Proc.882:364,2007, Journal Name: AIP Conf.Proc.882:364,2007
- Country of Publication:
- United States
- Language:
- English
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