Spectroscopic Studies of O-Vacancy Defects in Transition Metal Oxides
Journal Article
·
· J. Mater. Sci. Mater. Electron 18:S263,2007
OSTI ID:953941
Dielectrics comprised of nano-crystalline HfO{sub 2} in gate stacks with thin SiO{sub 2}/SiON interfacial transition regions display significant asymmetries with respect to trapping of Si substrate injected holes and electrons. Based on spectroscopic studies, and guided by ab initio theory, electron and hole traps in HfO{sub 2} and other transition metal elemental oxides are assigned to O-atom divacancies clustered at internal grain boundaries of nano-crystalline films. Engineering solutions in which grain boundary defects are suppressed include: (i) ultra-thin, <2 nm, HfO{sub 2} fims, (ii) chemically phase separated high HfO2 content silicate films, and (iii) non-crystalline Zr/Hf Si oxynitride films.
- Research Organization:
- Stanford Linear Accelerator Center (SLAC)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC02-76SF00515
- OSTI ID:
- 953941
- Report Number(s):
- SLAC-REPRINT-2009-451
- Journal Information:
- J. Mater. Sci. Mater. Electron 18:S263,2007, Journal Name: J. Mater. Sci. Mater. Electron 18:S263,2007 Journal Issue: Supp1 Vol. 18; ISSN 0957-4522; ISSN JSMEEV
- Country of Publication:
- United States
- Language:
- English
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