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Method for Improving Mg Doping During Group-III Nitride MOCVD

Patent ·
OSTI ID:953733
 [1];  [1]
  1. Albuquerque, NM
+ Show Author Affiliations

A method for improving Mg doping of Group III-N materials grown by MOCVD preventing condensation in the gas phase or on reactor surfaces of adducts of magnesocene and ammonia by suitably heating reactor surfaces between the location of mixing of the magnesocene and ammonia reactants and the Group III-nitride surface whereon growth is to occur.

Research Organization:
Sandia National Laboratories (SNL-NM), Albuquerque, NM
Sponsoring Organization:
United States Department of Energy
DOE Contract Number:
AC04-94AL85000
Assignee:
Sandia Corporation (Albuquerque, NM)
Patent Number(s):
7,449,404
Application Number:
11/115,685
OSTI ID:
953733
Country of Publication:
United States
Language:
English

References (5)

Reproducibility of GaN and InGaN films grown in a multi-wafer rotating-disc reactor journal January 1997
Memory Effect and Redistribution of Mg into Sequentially Regrown GaN Layer by Metalorganic Chemical Vapor Deposition journal January 2003
A study on strong memory effects for Mg doping in GaN metalorganic chemical vapor deposition journal December 1994
Complex Formation between Magnesocene (MgCp 2 ) and NH 3 :  Implications for p-Type Doping of Group III Nitrides and the Mg Memory Effect journal June 2004
Violet GaN based light emitting diodes fabricated by metal organics vapour phase epitaxy journal December 1997

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