Reactive sputter deposition of yttria-stabilized zirconia
Yttria-stabilized zirconia (YSZ) films are synthesized using reactive de magnetron sputter deposition. A homogeneous alloy of Zr-Y is synthesized and processed into a planar magnetron target which is reactively sputtered with an Argon-Oxygen gas mixture to form Zr-Y-0 films. The sputtering conditions of gas flow, gas pressure, deposition rate and substrate temperature are determined in order to produce the cubic phase of zirconia as verified with x-ray diffraction. A higher rate of deposition is achievable when the sputtering mode of the Zr-Y alloy target is metallic as opposed to oxide. The Zr-Y composition of the planar magnetron target is designed for optimium oxygen-ion conductivity in the YSZ films, at elevated temperature for potential use in solid-oxide fuel cells. The oxygen concentration of the as-deposited films is measured using Auger electron spectroscopy and found to principally vary as a function of the sputter deposition rate. A fuel cell is produced with the reactive deposition process using Pt electrodes from which the growth morphology of the YSZ layer is characterized using scanning electron microscopy.
- Research Organization:
- Lawrence Livermore National Lab., CA (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- W-7405-ENG-48
- OSTI ID:
- 95300
- Report Number(s):
- UCRL-JC--118652; CONF-950454--7; ON: DE95015878
- Country of Publication:
- United States
- Language:
- English
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