Pulsed-laser deposition of titanium nitride

Conference · Sat Apr 01 04:00:00 EST 1995

OSTI ID:95287

Jiang, Wenbiao; Norton, M G; Dickinson, J T ^[1]; Evans, N D ^[2]

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1. Washington State Univ., Pullman, WA (United States)
2. Oak Ridge Inst. for Science and Education, TN (United States)

The pulsed-laser deposition technique has been used to form thin films of TiN on (100)oriented single crystal substrates of silicon and rocksalt. Using atomic force microscopy, it was revealed that TiN films grown on silicon at substrate temperatures ranging from 50 C to 500 C were extremely smooth -- the mean roughness being {approximately} 0.2 nm. Thin TiN films deposited on freshly cleaved NaCl were found to be epitaxial at substrate temperatures as low as 50 C. Epitaxy in this latter system is believed to be due to the structural similarity between film and substrate and the almost exact 4:3 coincident site lattice.

• Research Organization: Oak Ridge National Lab., TN (United States); Oak Ridge Inst. for Science and Education, TN (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States); Oak Ridge Inst. for Science and Education, TN (United States)
• DOE Contract Number: AC05-84OR21400; AC05-76OR00033
• OSTI ID: 95287
• Report Number(s): CONF-950412--25; ON: DE95014584
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
DEPOSITION
EPITAXY
THIN FILMS
TITANIUM NITRIDES