Preparation and characterization of high-quality TiN films at low temperature by filtered cathode arc plasma

Journal Article · Mon Nov 01 04:00:00 EST 2004 · Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films

DOI:https://doi.org/10.1116/1.1807836· OSTI ID:20636783

Zhang, Y J; Yan, P X; Wu, Z G; Xu, J W; Zhang, W W; Li, X; Liu, W M; Xue, Q J ^[1]

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1. Department of Physics, Lanzhou University, Lanzhou 730000 (China)

High-quality TiN films were successfully deposited on silicon and stainless-steel substrates at low temperature using an improved filtered cathode arc plasma technique developed in our lab. Atomic force microscope, x-ray diffractometer, x-ray photoelectron spectroscopy, and a nanoindenter were employed to characterize the TiN thin films. The microhardness of the TiN films have a high value up to 41 GPa, which is far higher than that of TiN compounds deposited by conventional chemical vapor deposition and physical vapor deposition methods (20 Gpa or so). The films are of a stronger preferred crystalline orientation, very smooth surface, and high reflectivity. The effects of the negative substrate bias on the preferred crystalline orientation, surface roughness, deposition rate, and microhardness of Tin thin films are discussed in detail.

• OSTI ID: 20636783
• Journal Information: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films, Journal Name: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films Journal Issue: 6 Vol. 22; ISSN 0734-2101; ISSN JVTAD6
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ATOMIC FORCE MICROSCOPY
CHEMICAL VAPOR DEPOSITION
COATINGS
MICROHARDNESS
PHYSICAL VAPOR DEPOSITION
PLASMA ARC SPRAYING
PRESSURE RANGE GIGA PA
REFLECTIVITY
ROUGHNESS
SILICON
STAINLESS STEELS
TEMPERATURE RANGE 0065-0273 K
THIN FILMS
TITANIUM NITRIDES
X-RAY DIFFRACTION
X-RAY PHOTOELECTRON SPECTROSCOPY