Self-heating study of an AlGaN/GaN-based heterostructure field effect transistor using ultraviolet micro-Raman scattering.

Journal Article · Sat Jan 01 04:00:00 EST 2005 · Proposed for publication in Applied Physics Letters.

OSTI ID:951717

Kasisomayajula, V ^[1]; Baca, Albert G; AHMAD, I ^[1]; Berg, Jeremy Mark ^[1]; Holtz, M ^[1]; Allerman, Andrew Alan; Tigges, Christopher P; Kurtz, Steven Ross

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1. Texas Tech University, Lubbock, TX

We report micro-Raman studies of self-heating in an AlGaN/GaN heterostructure field-effect transistor using below (visible 488.0 nm) and near (UV 363.8 nm) GaN band-gap excitation. The shallow penetration depth of the UV light allows us to measure temperature rise ({Delta}T) in the two-dimensional electron gas (2DEG) region of the device between drain and source. Visible light gives the average {Delta}T in the GaN layer, and that of the SiC substrate, at the same lateral position. Combined, we depth profile the self-heating. Measured {Delta}T in the 2DEG is consistently over twice the average GaN-layer value. Electrical and thermal transport properties are simulated. We identify a hotspot, located at the gate edge in the 2DEG, as the prevailing factor in the self-heating.

• Research Organization: Sandia National Laboratories
• Sponsoring Organization: USDOE
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 951717
• Report Number(s): SAND2005-0028J
• Journal Information: Proposed for publication in Applied Physics Letters., Journal Name: Proposed for publication in Applied Physics Letters.
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
ALUMINIUM NITRIDES
ELECTRON GAS
FIELD EFFECT TRANSISTORS
GALLIUM NITRIDES
HEATING
TEMPERATURE MEASUREMENT