Recombination Kinetics and Stability in Polycrystalline Cu(In,Ga)Se2 Solar Cells
Time-resolved photoluminescence (TRPL) measurements indicate that bare Cu(In,Ga)Se{sub 2} (CIGS) films degrade when they are exposed to air or stored in nitrogen-purged dry boxes. The degradation significantly affects device performance and electro-optical measurements. Measuring films prior to degradation reveals long lifetimes and distinct recombination properties. For high-quality material, the surface recombination velocity at grain boundaries, bare CIGS surfaces, and CIGS/CdS interfaces is less than 10{sup 3} cm/s, and lifetime values are often greater than 50 ns. In high injection, CIGS has recombination properties similar to GaAs. On completed devices, charge-separation dynamics can be characterized.
- Research Organization:
- National Renewable Energy Laboratory (NREL), Golden, CO.
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC36-99GO10337
- OSTI ID:
- 950719
- Journal Information:
- Thin Solid Films, Journal Name: Thin Solid Films Journal Issue: 7, 2 February 2009 Vol. 517; ISSN THSFAP; ISSN 0040-6090
- Country of Publication:
- United States
- Language:
- English
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