Long Lifetimes in High-Efficiency Cu(In,Ga)Se2 Solar Cells
Time-resolved photoluminescence measurements on polycrystalline Cu(In,Ga)Se{sub 2} (CIGS) thin films corresponding to high-efficiency solar cells indicate recombination lifetimes as long as 250 ns, far exceeding previous measurements for this material. The lifetime decreases by two orders of magnitude when exposed to air. Charge separation effects can be observed on CIGS/CdS/ZnO devices in low-intensity conditions. The ZnO layer forms a robust junction critical for charge separation, whereas the CdS layer alone forms a much weaker junction. Recombination at the CIGS/CdS interface is negligible. The results significantly adjust the previous picture of recombination in CIGS solar cells.
- Research Organization:
- National Renewable Energy Laboratory (NREL), Golden, CO.
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC36-99GO10337
- OSTI ID:
- 940595
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 2, 2008 Vol. 93; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
Recombination Kinetics and Stability in Polycrystalline Cu(In,Ga)Se2 Solar Cells
In-situ Microscopy Characterization of Cu(In,Ga)Se2 Potential-Induced Degradation
Effect of Window-Layer Materials on p-n Junction Location in Cu(In,Ga)Se2 Solar Cells
Journal Article
·
Sun Feb 01 23:00:00 EST 2009
· Thin Solid Films
·
OSTI ID:950719
In-situ Microscopy Characterization of Cu(In,Ga)Se2 Potential-Induced Degradation
Conference
·
Wed Feb 05 23:00:00 EST 2020
·
OSTI ID:1605074
Effect of Window-Layer Materials on p-n Junction Location in Cu(In,Ga)Se2 Solar Cells
Journal Article
·
Wed Oct 17 00:00:00 EDT 2018
· IEEE Journal of Photovoltaics
·
OSTI ID:1480235