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Effect of Window-Layer Materials on p-n Junction Location in Cu(In,Ga)Se2 Solar Cells

Journal Article · · IEEE Journal of Photovoltaics
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  1. National Renewable Energy Lab. (NREL), Golden, CO (United States)
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We report on measurements of junction location in Cu(In,Ga)Se $$_{2}$$ (CIGS) solar cells with different window-layer materials by nm-resolution electrical potential/field profiling across the junction using Kelvin probe force microscopy imaging on cross-section of the devices. The results illustrate that the device with a CdS window layer (CdS/CIGS) has a buried homojunction located inside the CIGS absorber with ~40-nm junction depth, whereas the ZnOS/CIGS devices with and without partial electrolyte treatment prior to the window-layer deposition are similar, exhibiting a heterointerface junction. This junction location may contribute in part to the highest efficiency of the CdS/CIGS device among the three devices.
Research Organization:
National Renewable Energy Laboratory (NREL), Golden, CO (United States)
Sponsoring Organization:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)
Grant/Contract Number:
AC36-08GO28308
OSTI ID:
1480235
Report Number(s):
NREL/JA--5K00-70820
Journal Information:
IEEE Journal of Photovoltaics, Journal Name: IEEE Journal of Photovoltaics Journal Issue: 1 Vol. 9; ISSN 2156-3381
Publisher:
IEEECopyright Statement
Country of Publication:
United States
Language:
English

Figures / Tables (6)

TABLE I(p. 2)table TABLE I
Fig. 1(p. 3)figure Fig. 1
Fig. 2(p. 3)figure Fig. 2
Fig. 3(p. 4)figure Fig. 3
Fig. 4(p. 4)figure Fig. 4
Fig. 5(p. 5)figure Fig. 5

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Related Subjects

14 SOLAR ENERGY
36 MATERIALS SCIENCE
Cu(In
Ga)Se2 (CIGS)
Kelvin probe force microscopy (KPFM)
electrical potential/field
pn junction location
thin-film solar cell
window layer