Assessment of stress contributions in GaN HEMTs of differing substrates using Raman spectroscopy.
Journal Article
·
· Proposed for publication in the Journal of Applied Physics.
OSTI ID:950675
- RFMD, Inc., Greensboro, NC
- Georgia Institute of Technology, Atlanta, GA
No abstract prepared.
- Research Organization:
- Sandia National Laboratories
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 950675
- Report Number(s):
- SAND2009-1433J
- Journal Information:
- Proposed for publication in the Journal of Applied Physics., Journal Name: Proposed for publication in the Journal of Applied Physics.
- Country of Publication:
- United States
- Language:
- English
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