Slow Detrapping Transients due to Gate and Drain Bias Stress in High Breakdown Voltage AlGaN/GaN HEMTs.
Journal Article
·
· Proposed for publication in IEEE Transactions on Electron Devices.
Abstract Not Provided
- Research Organization:
- Sandia National Laboratories
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1073935
- Report Number(s):
- SAND2012-1843J
- Journal Information:
- Proposed for publication in IEEE Transactions on Electron Devices., Journal Name: Proposed for publication in IEEE Transactions on Electron Devices. Journal Issue: 8 Vol. 59; ISSN 0018-9383
- Country of Publication:
- United States
- Language:
- English
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