A Distributed Impedance %22Field Cage%22 for Improved Breakdown Voltage Scalability in AlGaN/GaN HEMTs.
Journal Article
·
· IEEE Transactions on Electron Devices
OSTI ID:1107908
Abstract not provided.
- Research Organization:
- Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1107908
- Report Number(s):
- SAND2013-7138J; 470024
- Journal Information:
- IEEE Transactions on Electron Devices, Journal Name: IEEE Transactions on Electron Devices
- Country of Publication:
- United States
- Language:
- English
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Slow Detrapping Transients due to Gate and Drain Bias Stress in High Breakdown Voltage AlGaN/GaN HEMTs.
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Wed Feb 29 23:00:00 EST 2012
· Proposed for publication in IEEE Transactions on Electron Devices.
·
OSTI ID:1073935