Epitaxial Pb(Mg{sub 1/3}Nb{sub 2/3})O{sub 3-}PbTiO{sub 3}A thin films grown by MOCVD.
Epitaxial Pb(Mg{sub 1/3}Nb{sub 2/3})O{sub 3} (PMN) and (1-x)(Pb(Mg{sub 1/3}Nb{sub 2/3})O{sub 3})-x(PbTiO{sub 3}) (PMN-PT) thin films have been deposited by metalorganic chemical vapor deposition at 700 - 780 {sup o}C on (100) SrTiO{sub 3} and SrRuO{sub 3}/SrTiO{sub 3} substrates. Room temperature values of 900 and 1.5%, were measured for the zero-bias permittivity and loss respectively, at 10 kHz for 200 nm thick pure PMN films. For PMN-PT films, the small-signal permittivity ranged from 1000 to 1500 depending on deposition conditions and Ti content; correspondingly low values for the zero-bias dielectric loss between 1 and 5% were determined for all samples. For PMN-PT with x of approximately 0.30 - 0.35, polarization hysteresis with P{sub r}{mu}18{mu}C/cm{sup 2} was obtained. Initial piezoresponse results are discussed.
- Research Organization:
- Argonne National Laboratory (ANL)
- Sponsoring Organization:
- SC; DOD; EE
- DOE Contract Number:
- AC02-06CH11357
- OSTI ID:
- 942901
- Report Number(s):
- ANL/MSD/JA-35758
- Journal Information:
- Integr. Ferroelectrics, Journal Name: Integr. Ferroelectrics Journal Issue: 1-4 ; 2001 Vol. 35; ISSN 1058-4587
- Country of Publication:
- United States
- Language:
- ENGLISH
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