Epitaxial Pb(Mg{sub 1/3}Nb{sub 2/3})O{sub 3} thin films synthesized by metal-organic chemical vapor deposition

Journal Article · Mon May 22 00:00:00 EDT 2000 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.126538· OSTI ID:20216498

Bai, G R ^[1]; Streiffer, S K ^[1]; Baumann, P K ^[1]; Auciello, O ^[1]; Ghosh, K ^[1]; Stemmer, S ^[2]; Munkholm, A ^[3]; Thompson, Carol ^[4]; Rao, R A ^[5]; Eom, C B ^[5]

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1. Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439-4838 (United States)
2. Department of Mechanical Engineering and Materials Science, Rice University, Houston, Texas 77005-1892 (United States)
3. Chemistry Division, Argonne National Laboratory, Argonne, Illinois 60439 (United States)
4. Department of Physics, Northern Illinois University, DeKalb, Illinois 60115 (United States)
5. Department of Mechanical Engineering and Materials Science, Duke University, Durham, North Carolina 27708-0300 (United States)

Metal-organic chemical vapor deposition was used to prepare Pb(Mg{sub 1/3}Nb{sub 2/3})O{sub 3} (PMN) thin films on (001) SrTiO{sub 3} and SrRuO{sub 3}/SrTiO{sub 3} substrates, using solid Mg {beta}-diketonate as the Mg precursor. Parameters including the precursor ratio in the vapor phase, growth temperature, growth rate, and reaction pressure in the reactor chamber were varied in order to determine suitable growth conditions for producing phase-pure, epitaxial PMN films. A cube-on-cube orientation relationship between the thin film and the SrTiO{sub 3} substrate was found, with a (001) rocking curve width of 0.1 degree sign , and in-plane rocking-curve width of 0.8 degree sign . The root-mean-square surface roughness of a 200-nm-thick film on SrTiO{sub 3} was 2 to 3 nm as measured by scanning probe microscopy. The zero-bias dielectric constant and loss measured at room temperature and 10 kHz for a 200-nm-thick film on SrRuO{sub 3}/SrTiO{sub 3} were approximately 1100 and 2%, respectively. The remnant polarization for this film was 16 {mu}C/cm{sup 2}. (c) 2000 American Institute of Physics.

• Research Organization: Argonne National Laboratory (ANL), Argonne, IL
• OSTI ID: 20216498
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 21 Vol. 76; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CHEMICAL VAPOR DEPOSITION
DIELECTRIC TENSOR
EPITAXY
EXPERIMENTAL DATA
FERROELECTRIC MATERIALS
GRAIN ORIENTATION
LEAD OXIDES
MAGNESIUM OXIDES
NIOBIUM OXIDES
POLARIZATION
THIN FILMS
X-RAY DIFFRACTION