Ferroelectric and piezoelectric properties of MOCVD Pb(Mg{sub 1/3}Nb{sub 2/3})O{sub 3}PbTiO{sub 3} epitaxial thin films
The authors have grown epitaxial Pb(Mg{sub 1/3}Nb{sub 2/3})O{sub 3} (PMN) and (1-x)(Pb(Mg{sub 1/3}Nb{sub 2/3})O{sub 3})-x(PBTiO{sub 3})(PMN-PT)thin films by metalorganic chemical vapor deposition at 700 -- 780 C on (100) SrTiO{sub 3} and SrRuO{sub 3}/SrTiO{sub 3} substrates. The zero-bias permittivity and loss measured at room temperature and 10 kHz for 220 nm thick pure PMN films were 900 and 1.5%, respectively. For PMN-PT films the small-signal permittivity ranged from 1000 to 1500 depending on deposition conditions and Ti content; correspondingly low values for the zero-bias dielectric loss between 1 and 5% were determined for all specimens. For PMN-PT with x of approximately 0.30--0.35, polarization hysteresis with P{sub r}{approximately}18{mu}C/cm{sup 2} was obtained. Initial piezoresponse data are discussed.
- Research Organization:
- Argonne National Lab., IL (US)
- Sponsoring Organization:
- US Department of Energy (US)
- DOE Contract Number:
- W-31109-ENG-38
- OSTI ID:
- 751839
- Report Number(s):
- ANL/MSD/CP-99579
- Country of Publication:
- United States
- Language:
- English
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