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Epitaxial growth of non-c-oriented SrBi{sub 2}Nb{sub 2}Op on (111) SrTiO{sub 3}.

Journal Article · · Appl. Phys. Lett.
DOI:https://doi.org/10.1063/1.126522· OSTI ID:942814
Epitaxial SrBi{sub 2}Nb{sub 2}O{sub 9} thin films have been grown with a (103) orientation on (111) SrTiO{sub 3} substrates by pulsed-laser deposition. Four-circle x-ray diffraction and transmission electron microscopy reveal nearly phase-pure epitaxial films. Epitaxial (111) SrRuO{sub 3} electrodes enabled the electrical properties of these (103)-oriented SrBi{sub 2}Nb{sub 2}O{sub 9} films to be measured. The low-field relative permittivity was 185, the remanent polarization was 15.7 {mu}C/cm{sup 2}, and the dielectric loss was 2.5% for a 0.5-{mu}m-thick film.
Research Organization:
Argonne National Laboratory (ANL)
Sponsoring Organization:
SC
DOE Contract Number:
AC02-06CH11357
OSTI ID:
942814
Report Number(s):
ANL/MSD/JA-34875
Journal Information:
Appl. Phys. Lett., Journal Name: Appl. Phys. Lett. Journal Issue: 20 ; May 15, 2000 Vol. 76; ISSN APPLAB; ISSN 0003-6951
Country of Publication:
United States
Language:
ENGLISH