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Epitaxial growth of non-c-oriented SrBi{sub 2}Nb{sub 2}O{sub 9} on (111) SrTiO{sub 3}

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.126522· OSTI ID:20216362
 [1];  [1];  [1];  [1];  [2];  [3]
  1. Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16803-6602 (United States)
  2. Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439 (United States)
  3. Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)
Epitaxial SrBi{sub 2}Nb{sub 2}O{sub 9} thin films have been grown with a (103) orientation on (111) SrTiO{sub 3} substrates by pulsed-laser deposition. Four-circle x-ray diffraction and transmission electron microscopy reveal nearly phase-pure epitaxial films. Epitaxial (111) SrRuO{sub 3} electrodes enabled the electrical properties of these (103)-oriented SrBi{sub 2}Nb{sub 2}O{sub 9} films to be measured. The low-field relative permittivity was 185, the remanent polarization was 15.7 {mu}C/cm{sup 2}, and the dielectric loss was 2.5% for a 0.5-{mu}m-thick film. (c) 2000 American Institute of Physics.
OSTI ID:
20216362
Journal Information:
Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 20 Vol. 76; ISSN APPLAB; ISSN 0003-6951
Country of Publication:
United States
Language:
English