Epitaxial growth of non-c-oriented SrBi{sub 2}Nb{sub 2}O{sub 9} on (111) SrTiO{sub 3}
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16803-6602 (United States)
- Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439 (United States)
- Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)
Epitaxial SrBi{sub 2}Nb{sub 2}O{sub 9} thin films have been grown with a (103) orientation on (111) SrTiO{sub 3} substrates by pulsed-laser deposition. Four-circle x-ray diffraction and transmission electron microscopy reveal nearly phase-pure epitaxial films. Epitaxial (111) SrRuO{sub 3} electrodes enabled the electrical properties of these (103)-oriented SrBi{sub 2}Nb{sub 2}O{sub 9} films to be measured. The low-field relative permittivity was 185, the remanent polarization was 15.7 {mu}C/cm{sup 2}, and the dielectric loss was 2.5% for a 0.5-{mu}m-thick film. (c) 2000 American Institute of Physics.
- OSTI ID:
- 20216362
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 20 Vol. 76; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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