Deprotection blue in extreme ultraviolet photoresists: influence of base loading and post-exposure bake temperture

Journal Article · Mon Jun 02 04:00:00 EDT 2008 · JVST B

OSTI ID:941690

Anderson, Christopher N; Naulleau, Patrick P

The deprotection blur of Rohm and Haas XP 5435, XP 5271, and XP5496 extreme ultraviolet photoresists has been determined as their base weight percent is varied. They have also determined the deprotection blur of TOK EUVR P1123 photoresist as the post-exposure bake temperature is varied from 80 C to 120 C. In Rohm and Haas XP 5435 and XP5271 resists 7x and 3x (respective) increases in base weight percent reduce the size of successfully patterned 1:1 line-space features by 16 nm and 8 nm with corresponding reductions in deprotection blur of 7 nm and 4 nm. In XP 5496 a 7x increase in base weight percent reduces the size of successfully patterned 1:1 line-space features from 48 nm to 38 nm without changing deprotection blur. In TOK EUVR P1123 resist, a reduction in post-exposure bake temperature from 100 C to 80 C reduces deprotection blur from 21 nm to 10 nm and reduces patterned LER from 4.8 nm to 4.1 nm.

• Research Organization: Ernest Orlando Lawrence Berkeley National Laboratory, Berkeley, CA (US)
• Sponsoring Organization: Materials Sciences Division
• DOE Contract Number: AC02-05CH11231
• OSTI ID: 941690
• Report Number(s): LBNL-1154E
• Journal Information: JVST B, Journal Name: JVST B; ISSN 0734-211X; ISSN JVTBD9
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
EXTREME ULTRAVIOLET RADIATION
FABRICATION
HEATING
MASKING
TEMPERATURE CONTROL