Influence of base and PAG on deprotection blur in EUV photoresists and some thoughts on shot noise

Conference · Sun Jun 01 04:00:00 EDT 2008

OSTI ID:934957

Jones, Juanita; Anderson, Christopher; Naulleau, Patrick; Niakoula, Demitra; Hassanein, Elsayed; Brainard, Robert; Gallatin, Gregg; Dean, Kim

A contact-hole deprotection blur metric has been used to monitor the deprotection blur of an experimental open platform resist (EH27) as the weight percent of base and photo acid generator (PAG) were varied. Patterning ability in 1:1 line-space patterns is shown to improve at smaller pitches as base/PAG are increased however no significant change in deprotection blur was observed. Isolated (or intrinsic) line-edge-roughness (LER) is shown to improve with increased base loading while remaining fixed through PAG loading. A discussion of improved patterning performance as related to shot noise and deprotection blur concludes with a speculation that the spatial distribution of PAG molecules has been playing some role, perhaps a dominant one, in determining the uniformity of photo generated acids in the resists that have been studied.

• Research Organization: Ernest Orlando Lawrence Berkeley National Laboratory, Berkeley, CA (US)
• Sponsoring Organization: Materials Sciences Division
• DOE Contract Number: AC02-05CH11231
• OSTI ID: 934957
• Report Number(s): LBNL-645E
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
Influence PAG deprotection EUV photoresists shot noise
METRICS
MONITORS
PERFORMANCE
PHOTON BEAMS
PITCHES
SPATIAL DISTRIBUTION