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Title: Don't always blame the photons: Relationships between deprotection blur, LER, and shot noise in EUV photoresists

Abstract

A corner rounding metric has been used to determine the deprotection blur of Rohm and Haas XP 5435, XP 5271, and XP 5496 extreme ultraviolet (EUV) photoresists as base weight percent is varied; an experimental open platform photoresist (EH27) as base weight percent is varied; and TOK EUVR P1123 and FUJI 1195 photoresists as post-exposure bake (PEB) temperature is varied. In the XP 5435, XP 5271, XP 5496, and EH27 resist platforms, a 6 times increase in base weight percent reduces the size of successfully patterned 1:1 lines by over 10 nm and lowers intrinsic line-edge roughness (LER) by over 2.5 nm without changing deprotection blur. In TOK EUVR P1123 photoresist, lowering the PEB temperature from 100 C to 80 C reduces measured deprotection blur (using the corner metric) from 30 nm to 20 nm and reduces the LER of 50 nm 1:1 lines from 4.8 nm to 4.3 nm. These data are used to drive a lengthy discussion about the relationships between deprotection blur, LER, and shot noise in EUV photoresists. We provide two separate conclusions: (1) shot noise is probably not the dominant mechanism causing the 3-4 nm EUV LER floor that has been observed over the pastmore » several years; (2) chemical contrast contributes to LER whenever deprotection blur is large relative to the printed half pitch.« less

Authors:
;
Publication Date:
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org.:
Materials Sciences Division
OSTI Identifier:
950847
Report Number(s):
LBNL-1435E
Journal ID: ISSN 0734-211X; JVTBD9; TRN: US200911%%92
DOE Contract Number:  
DE-AC02-05CH11231
Resource Type:
Journal Article
Journal Name:
JVST B
Additional Journal Information:
Journal Name: JVST B; Journal ID: ISSN 0734-211X
Country of Publication:
United States
Language:
English
Subject:
36; METRICS; PHOTONS; ROUGHNESS; X-RAY PHOTOELECTRON SPECTROSCOPY

Citation Formats

Anderson, Christopher N, and Naulleau, Patrick P. Don't always blame the photons: Relationships between deprotection blur, LER, and shot noise in EUV photoresists. United States: N. p., 2008. Web.
Anderson, Christopher N, & Naulleau, Patrick P. Don't always blame the photons: Relationships between deprotection blur, LER, and shot noise in EUV photoresists. United States.
Anderson, Christopher N, and Naulleau, Patrick P. Mon . "Don't always blame the photons: Relationships between deprotection blur, LER, and shot noise in EUV photoresists". United States. https://www.osti.gov/servlets/purl/950847.
@article{osti_950847,
title = {Don't always blame the photons: Relationships between deprotection blur, LER, and shot noise in EUV photoresists},
author = {Anderson, Christopher N and Naulleau, Patrick P},
abstractNote = {A corner rounding metric has been used to determine the deprotection blur of Rohm and Haas XP 5435, XP 5271, and XP 5496 extreme ultraviolet (EUV) photoresists as base weight percent is varied; an experimental open platform photoresist (EH27) as base weight percent is varied; and TOK EUVR P1123 and FUJI 1195 photoresists as post-exposure bake (PEB) temperature is varied. In the XP 5435, XP 5271, XP 5496, and EH27 resist platforms, a 6 times increase in base weight percent reduces the size of successfully patterned 1:1 lines by over 10 nm and lowers intrinsic line-edge roughness (LER) by over 2.5 nm without changing deprotection blur. In TOK EUVR P1123 photoresist, lowering the PEB temperature from 100 C to 80 C reduces measured deprotection blur (using the corner metric) from 30 nm to 20 nm and reduces the LER of 50 nm 1:1 lines from 4.8 nm to 4.3 nm. These data are used to drive a lengthy discussion about the relationships between deprotection blur, LER, and shot noise in EUV photoresists. We provide two separate conclusions: (1) shot noise is probably not the dominant mechanism causing the 3-4 nm EUV LER floor that has been observed over the past several years; (2) chemical contrast contributes to LER whenever deprotection blur is large relative to the printed half pitch.},
doi = {},
journal = {JVST B},
issn = {0734-211X},
number = ,
volume = ,
place = {United States},
year = {2008},
month = {6}
}