Organic Light Emitting Diodes Using a Ga:ZnO Anode

Journal Article · Mon May 12 00:00:00 EDT 2008 · Applied Physics Letters, 92(19):193304

DOI:https://doi.org/10.1063/1.2917565· OSTI ID:937020

Berry, J J; Ginley, D S; Burrows, Paul E

We report the application of gallium doped zinc oxide (GZO) films as anodes in organic light emitting diodes (OLEDs). Pulsed laser deposited GZO films of differing Ga composition are examined. Bilayer OLEDs using GZO and indium tin oxide (ITO) anodes are then compared. Relative to ITO, the GZO anodes have slightly better sheet resistance and transparency in the visible spectral region. Device data suggest GZO results in more effective hole injection into an aromatic triamine hole transporting layer. Indium free anodes are expected toimprove OLED stability while lowering the cost per unit area, crucial for OLED based lighting applications.

• Research Organization: Pacific Northwest National Laboratory (PNNL), Richland, WA (US)
• Sponsoring Organization: USDOE
• DOE Contract Number: AC05-76RL01830
• OSTI ID: 937020
• Report Number(s): PNNL-SA-57249; 830403000
• Journal Information: Applied Physics Letters, 92(19):193304, Journal Name: Applied Physics Letters, 92(19):193304 Journal Issue: 19 Vol. 92; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
ANODES
DESIGN
DOPED MATERIALS
GALLIUM
GZO
LIGHT EMITTING DIODES
OLED
OPACITY
PHOTOCONDUCTIVITY
ZINC OXIDES
gallium doped zinc oxide
organic light emitting diode