Organic light emitting diodes using a Ga:ZnO anode

Journal Article · Mon May 12 00:00:00 EDT 2008 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2917565· OSTI ID:1354237

Berry, J. J.; Ginley, D. S.; Burrows, P. E.

We report the application of gallium doped zinc oxide (GZO) films as anodes in organic light emitting diodes (OLEDs). Pulsed laser deposited GZO films of differing Ga composition are examined. Bilayer OLEDs using GZO and indium tin oxide (ITO) anodes are compared. Relative to ITO, the GZO anodes have a slightly better sheet resistance and transparency in the visible spectral region. Device data suggest that GZO effectively injects holes into an aromatic triamine hole transporting layer. Indium-free anodes such as GZO are expected to improve OLED stability while lowering the cost per unit area, which is crucial for OLED based lighting applications.

• Research Organization: National Renewable Energy Lab. (NREL), Golden, CO (United States)
• Sponsoring Organization: USDOE Office of Energy Efficiency and Renewable Energy, Building Technologies Solid-State Lighting Program
• DOE Contract Number: AC36-08GO28308
• OSTI ID: 1354237
• Report Number(s): NREL/JA-520-43764
• Journal Information: Applied Physics Letters, Vol. 92, Issue 19; ISSN 0003-6951
• Publisher: American Institute of Physics (AIP)
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
transparent conducting oxides
device degradation
anodes