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Title: Final report on LDRD project 105967 : exploring the increase in GaAs photodiode responsivity with increased neutron fluence.

Abstract

A previous LDRD studying radiation hardened optoelectronic components for space-based applications led to the result that increased neutron irradiation from a fast-burst reactor caused increased responsivity in GaAs photodiodes up to a total fluence of 4.4 x 10{sup 13} neutrons/cm{sup 2} (1 MeV Eq., Si). The silicon photodiodes experienced significant degradation. Scientific literature shows that neutrons can both cause defects as well as potentially remove defects in an annealing-like process in GaAs. Though there has been some modeling that suggests how fabrication and radiation-induced defects can migrate to surfaces and interfaces in GaAs and lead to an ordering effect, it is important to consider how these processes affect the performance of devices, such as the basic GaAs p-i-n photodiode. In this LDRD, we manufactured GaAs photodiodes at the MESA facility, irradiated them with electrons and neutrons at the White Sands Missile Range Linac and Fast Burst Reactor, and performed measurements to show the effect of irradiation on dark current, responsivity and high-speed bandwidth.

Authors:
; ; ; ; ; ; ;
Publication Date:
Research Org.:
Sandia National Laboratories
Sponsoring Org.:
USDOE
OSTI Identifier:
934851
Report Number(s):
SAND2007-8095
TRN: US0804099
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Technical Report
Country of Publication:
United States
Language:
English
Subject:
21 SPECIFIC NUCLEAR REACTORS AND ASSOCIATED PLANTS; 43 PARTICLE ACCELERATORS; DEFECTS; ELECTRONS; FABRICATION; IRRADIATION; LINEAR ACCELERATORS; MISSILES; NEUTRON FLUENCE; NEUTRONS; PERFORMANCE; PHOTODIODES; PULSED REACTORS; RADIATIONS; SILICON; SIMULATION; Irradiation-Testing.; Neutron irradiation.; Gallium arsenide.; Gallium arsenide semiconductors-Testing.

Citation Formats

Blansett, Ethan L, Geib, Kent Martin, Cich, Michael Joseph, Wrobel, Theodore Frank, Peake, Gregory Merwin, Fleming, Robert M, Serkland, Darwin Keith, and Wrobel, Diana L. Final report on LDRD project 105967 : exploring the increase in GaAs photodiode responsivity with increased neutron fluence.. United States: N. p., 2008. Web. doi:10.2172/934851.
Blansett, Ethan L, Geib, Kent Martin, Cich, Michael Joseph, Wrobel, Theodore Frank, Peake, Gregory Merwin, Fleming, Robert M, Serkland, Darwin Keith, & Wrobel, Diana L. Final report on LDRD project 105967 : exploring the increase in GaAs photodiode responsivity with increased neutron fluence.. United States. doi:10.2172/934851.
Blansett, Ethan L, Geib, Kent Martin, Cich, Michael Joseph, Wrobel, Theodore Frank, Peake, Gregory Merwin, Fleming, Robert M, Serkland, Darwin Keith, and Wrobel, Diana L. Tue . "Final report on LDRD project 105967 : exploring the increase in GaAs photodiode responsivity with increased neutron fluence.". United States. doi:10.2172/934851. https://www.osti.gov/servlets/purl/934851.
@article{osti_934851,
title = {Final report on LDRD project 105967 : exploring the increase in GaAs photodiode responsivity with increased neutron fluence.},
author = {Blansett, Ethan L and Geib, Kent Martin and Cich, Michael Joseph and Wrobel, Theodore Frank and Peake, Gregory Merwin and Fleming, Robert M and Serkland, Darwin Keith and Wrobel, Diana L},
abstractNote = {A previous LDRD studying radiation hardened optoelectronic components for space-based applications led to the result that increased neutron irradiation from a fast-burst reactor caused increased responsivity in GaAs photodiodes up to a total fluence of 4.4 x 10{sup 13} neutrons/cm{sup 2} (1 MeV Eq., Si). The silicon photodiodes experienced significant degradation. Scientific literature shows that neutrons can both cause defects as well as potentially remove defects in an annealing-like process in GaAs. Though there has been some modeling that suggests how fabrication and radiation-induced defects can migrate to surfaces and interfaces in GaAs and lead to an ordering effect, it is important to consider how these processes affect the performance of devices, such as the basic GaAs p-i-n photodiode. In this LDRD, we manufactured GaAs photodiodes at the MESA facility, irradiated them with electrons and neutrons at the White Sands Missile Range Linac and Fast Burst Reactor, and performed measurements to show the effect of irradiation on dark current, responsivity and high-speed bandwidth.},
doi = {10.2172/934851},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2008},
month = {1}
}

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