Component Overpressure Growth and Characterization of High Resistivity CdTe Crystals for Radiation Detectors

Journal Article · Sun Dec 31 23:00:00 EST 2006 · Journal of Electronic Materials

DOI:https://doi.org/10.1007/s11664-007-0164-y· OSTI ID:932152

Mandal, Krishna ^[1]; Kang, Sung Hoon ^[1]; Choi, Michael ^[1]; Wei, Jiuan ^[2]; Zheng, Lili ^[2]; Zhang, Hui ^[2]; Jellison, Jr, Gerald Earle ^[3]; Groza, Michael ^[4]; Burger, Arnold ^[4]

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1. EIC Laboratories, Inc.
2. State University of New York, Stony Brook
3. ORNL
4. Fisk University, Nashville, TN

Spectrometer-grade CdTe single crystals with resistivities higher than 10{sup 9} {Omega} cm have been grown by the modified Bridgman method using zone-refined precursor materials (Cd and Te) under a Cd overpressure. The grown CdTe crystals had good charge-transport properties ({mu}{tau}{sub e} = 2 x 10{sup -3} cm{sup 2} V{sup -1}, {mu}{tau}{sub h} = 8 x 10{sup -5} cm{sup 2} V{sup -1}) and significantly reduced Te precipitates compared with crystals grown without Cd overpressure. The crystal growth conditions for the Bridgman system were optimized by computer modeling and simulation, using modified MASTRAPP program, and applied to crystal diameters of 14 mm (0.55'), 38 mm (1.5'), and 76 mm (3'). Details of the CdTe crystal growth operation, structural, electrical, and optical characterization measurements, detector fabrication, and testing using {sup 241}Am (60 keV) and {sup 137}Cs (662 keV) sources are presented.

• Research Organization: Oak Ridge National Laboratory (ORNL)
• Sponsoring Organization: SC USDOE - Office of Science (SC)
• DOE Contract Number: AC05-00OR22725
• OSTI ID: 932152
• Journal Information: Journal of Electronic Materials, Journal Name: Journal of Electronic Materials Journal Issue: 8 Vol. 36; ISSN JECMA5; ISSN 0361-5235
• Country of Publication: United States
• Language: English

Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
BRIDGMAN METHOD
CHARGE TRANSPORT
CRYSTAL GROWTH
RADIATION DETECTORS