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Growth and characterization of detector-grade CdMnTe by the vertical Bridgman technique

Journal Article · · Journal of Crystal Growth
 [1];  [2];  [1];  [1];  [2];  [1];  [1];  [2];  [1]
  1. Brookhaven National Lab. (BNL), Upton, NY (United States)
  2. Brookhaven National Lab. (BNL), Upton, NY (United States); Alabama A&M Univ., Normal, AL (United States)
We grew Cd1-xMnxTe crystals with a nominal Mn concentration of 5% by the vertical Bridgman growth technique. The compositional variation along the length of the grown ingot was studied by powder X-ray diffraction. The composition was found to be uniform along the growth direction. The achieved resistivity was 1-2.5 x1010 ohm-cm with a mobility-lifetime (μτ) product value for electrons of ~1.7x10-3 cm2/V. An energy resolution of ~7.5% at 662 keV was achieved for a 9-mm long Frisch grid detector fabricated from an ingot grown using as-received starting materials.
Research Organization:
Alabama A&M Univ., Normal, AL (United States); Brookhaven National Lab. (BNL), Upton, NY (United States)
Sponsoring Organization:
Dept. of Homeland Security (DHS) (United States); Nuclear Regulatory Commission (NRC) (United States); USDOE National Nuclear Security Administration (NNSA), Office of Defense Nuclear Nonproliferation (NA-20)
Grant/Contract Number:
SC0012704
OSTI ID:
1438178
Alternate ID(s):
OSTI ID: 1354381
OSTI ID: 1251781
Report Number(s):
BNL--205682-2018-JAAM; PII: S0022024815007368
Journal Information:
Journal of Crystal Growth, Journal Name: Journal of Crystal Growth Vol. 437; ISSN 0022-0248
Publisher:
ElsevierCopyright Statement
Country of Publication:
United States
Language:
English

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Determining the sub-surface damage of CdTe single crystals after lapping journal March 2018

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