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Title: Growth and characterization of detector-grade CdMnTe by the vertical Bridgman Technique

Journal Article · · AIP Advances
DOI:https://doi.org/10.1063/1.5040362· OSTI ID:1476281
 [1];  [2];  [1];  [1];  [2];  [1];  [3];  [2];  [4]
  1. Brookhaven National Lab. (BNL), Upton, NY (United States)
  2. Brookhaven National Lab. (BNL), Upton, NY (United States); Alabama A&M Univ., Normal, AL (United States)
  3. Brookhaven National Lab. (BNL), Upton, NY (United States); North Carolina State Univ., Raleigh, NC (United States)
  4. Brookhaven National Lab. (BNL), Upton, NY (United States); Savannah River National Lab., Aiken, SC (United States)

Research Organization:
Brookhaven National Lab. (BNL), Upton, NY (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA), Office of Nonproliferation and Verification Research and Development (NA-22); USDOE National Nuclear Security Administration (NNSA), Office of Defense Nuclear Nonproliferation
Grant/Contract Number:
SC0012704; AC09-08SR22470
OSTI ID:
1476281
Alternate ID(s):
OSTI ID: 1476963; OSTI ID: 1574670
Report Number(s):
BNL-209126-2018-JAAM; SRNL-STI-2017-00241
Journal Information:
AIP Advances, Vol. 8, Issue 10; ISSN 2158-3226
Publisher:
American Institute of Physics (AIP)Copyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 7 works
Citation information provided by
Web of Science

References (23)

Liquid-phase-epitaxy-grown InAsxSb1−x∕GaAs for room-temperature 8–12μm infrared detectors journal June 2006
Radial segregation induced by natural convection and melt/solid interface shape in vertical bridgman growth journal October 1983
Applications of II–VI semimagnetic semiconductors journal October 2006
Influence of the cooling scheme on the performance and presence of carrier traps for CdMnTe detectors journal August 2013
Vanadium-Doped Cadmium Manganese Telluride (Cd1−x Mn x Te) Crystals as X- and Gamma-Ray Detectors journal April 2009
Twins in CdMnTe single crystals grown by Bridgman method journal January 2010
Fiber optic CdMnTe magnetic field sensor made by the laser ablation deposition technique journal April 1994
High-Purity CdMnTe Radiation Detectors: A High-Resolution Spectroscopic Evaluation journal April 2013
Lateral solute segregation during undirectional solidification of a binary alloy with a curved solid—Liquid interface journal April 1979
Is the (Cd,Mn)Te crystal a prospective material for X-ray and ?-ray detectors? journal March 2005
Stability of a Planar Interface During Solidification of a Dilute Binary Alloy journal February 1964
Growth and characterization of In doped Cd0.8Mn0.2Te single crystal journal August 2007
Crystal growth, fabrication and evaluation of cadmium manganese telluride gamma ray detectors journal March 1999
Growth and characterization of Cd1−xMnxTe and MnTe crystals; contribution to the CdTe-MnTe pseudo-binary phase diagram determination journal April 1981
Twin-free (Cd, Mn)Te substrates journal April 1990
High compositional homogeneity of CdTe x Se 1−x crystals grown by the Bridgman method journal February 2015
Diluted magnetic semiconductors journal August 1988
Zinc and selenium co-doped CdTe substrates lattice matched to HgCdTe journal January 1989
Investigation of point defects and electrical properties of the In-doped CdMnTe grown by traveling heater method journal April 2017
Convection effects on radial segregation and crystal–melt interface in vertical Bridgman growth journal July 1994
Solution growth of In-doped CdMnTe crystals by the vertical Bridgman method with the ACRT technique journal September 2012
Vertical Bridgman growth and characterization of CdMnTe crystals for gamma-ray radiation detector journal March 2011
Modified Bridgman growth of CdTe crystals journal April 2008

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