Growth and characterization of detector-grade CdMnTe by the vertical Bridgman Technique
- Brookhaven National Lab. (BNL), Upton, NY (United States)
- Brookhaven National Lab. (BNL), Upton, NY (United States); Alabama A&M Univ., Normal, AL (United States)
- Brookhaven National Lab. (BNL), Upton, NY (United States); North Carolina State Univ., Raleigh, NC (United States)
- Brookhaven National Lab. (BNL), Upton, NY (United States); Savannah River National Lab., Aiken, SC (United States)
Here, we grew Cd1-xMnxTe crystals with a nominal Mn concentration of 5% by the vertical Bridgman growth technique. The compositional variation along the length of the grown ingot was studied by powder X-ray diffraction. The composition was found to be uniform along the growth direction. The achieved resistivity was 1-2.5 x1010 ohm-cm with a mobility-lifetime (μτ) product value for electrons of ~1.7x10-3 cm2/V. An energy resolution of ~7.5% at 662 keV was achieved or a 9-mm long Frisch grid detector fabricated from an ingot grown using as-received starting materials.
- Research Organization:
- Brookhaven National Laboratory (BNL), Upton, NY (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA), Office of Defense Nuclear Nonproliferation; USDOE National Nuclear Security Administration (NNSA), Office of Defense Nuclear Nonproliferation (NA-20); USDOE National Nuclear Security Administration (NNSA), Office of Nonproliferation and Verification Research and Development (NA-22)
- Grant/Contract Number:
- AC09-08SR22470; SC0012704
- OSTI ID:
- 1476281
- Alternate ID(s):
- OSTI ID: 1574670
OSTI ID: 1476963
- Report Number(s):
- BNL--209126-2018-JAAM; SRNL-STI--2017-00241
- Journal Information:
- AIP Advances, Journal Name: AIP Advances Journal Issue: 10 Vol. 8; ISSN 2158-3226
- Publisher:
- American Institute of Physics (AIP)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
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