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Growth and characterization of detector-grade CdMnTe by the vertical Bridgman Technique

Journal Article · · AIP Advances
DOI:https://doi.org/10.1063/1.5040362· OSTI ID:1476281
 [1];  [2];  [1];  [1];  [2];  [1];  [3];  [2];  [4]
  1. Brookhaven National Lab. (BNL), Upton, NY (United States)
  2. Brookhaven National Lab. (BNL), Upton, NY (United States); Alabama A&M Univ., Normal, AL (United States)
  3. Brookhaven National Lab. (BNL), Upton, NY (United States); North Carolina State Univ., Raleigh, NC (United States)
  4. Brookhaven National Lab. (BNL), Upton, NY (United States); Savannah River National Lab., Aiken, SC (United States)
Here, we grew Cd1-xMnxTe crystals with a nominal Mn concentration of 5% by the vertical Bridgman growth technique. The compositional variation along the length of the grown ingot was studied by powder X-ray diffraction. The composition was found to be uniform along the growth direction. The achieved resistivity was 1-2.5 x1010 ohm-cm with a mobility-lifetime (μτ) product value for electrons of ~1.7x10-3 cm2/V. An energy resolution of ~7.5% at 662 keV was achieved or a 9-mm long Frisch grid detector fabricated from an ingot grown using as-received starting materials.
Research Organization:
Brookhaven National Laboratory (BNL), Upton, NY (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA), Office of Defense Nuclear Nonproliferation; USDOE National Nuclear Security Administration (NNSA), Office of Defense Nuclear Nonproliferation (NA-20); USDOE National Nuclear Security Administration (NNSA), Office of Nonproliferation and Verification Research and Development (NA-22)
Grant/Contract Number:
AC09-08SR22470; SC0012704
OSTI ID:
1476281
Alternate ID(s):
OSTI ID: 1574670
OSTI ID: 1476963
Report Number(s):
BNL--209126-2018-JAAM; SRNL-STI--2017-00241
Journal Information:
AIP Advances, Journal Name: AIP Advances Journal Issue: 10 Vol. 8; ISSN 2158-3226
Publisher:
American Institute of Physics (AIP)Copyright Statement
Country of Publication:
United States
Language:
English

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