Growth of CdMnTe free of large Te inclusions using the vertical Bridgman technique
Journal Article
·
· Journal of Crystal Growth
- Brookhaven National Lab. (BNL), Upton, NY (United States)
- Brookhaven National Lab. (BNL), Upton, NY (United States); Alabama A&M Univ., Normal, AL (United States)
- Brookhaven National Lab. (BNL), Upton, NY (United States); North Carolina State Univ., Raleigh, NC (United States)
- Brookhaven National Lab. (BNL), Upton, NY (United States); Savannah River National Lab., Aiken, SC (United States)
Here, we grew Cd1-xMnxTe crystals with a nominal composition of 5% Mn and 95% Cd using the vertical Bridgman technique. We were able to grow crystals from as-received starting material that were free of secondary phases, such as Te inclusions with a size > 1-µm diameter, without adding compensating Cd to the initial charge. The Te precipitations (size < 1-µm diameter) were found to segregate towards the last-to-freeze section of the ingot. Te inclusions with a size 5-7 µm were observed at the grain boundary located near the last-to-freeze section, while the bottom and middle parts of the ingot showed no Te inclusions, even at the grain boundaries. X-ray topographic analysis was used to characterize the distribution of thermal stress in the ingot.
- Research Organization:
- Brookhaven National Laboratory (BNL), Upton, NY (United States); Savannah River Site (SRS), Aiken, SC (United States)
- Sponsoring Organization:
- USDOE; USDOE National Nuclear Security Administration (NNSA), Office of Nonproliferation and Verification Research and Development (NA-22)
- Grant/Contract Number:
- AC09-08SR22470; SC0012704
- OSTI ID:
- 1489339
- Alternate ID(s):
- OSTI ID: 1635972
OSTI ID: 1490311
- Report Number(s):
- BNL--210837-2019-JAAM; SRNL-STI--2018-00717
- Journal Information:
- Journal of Crystal Growth, Journal Name: Journal of Crystal Growth Vol. 509; ISSN 0022-0248
- Publisher:
- ElsevierCopyright Statement
- Country of Publication:
- United States
- Language:
- English
Novel Electrodes and Engineered Interfaces for Halide-Semiconductor Radiation Detectors
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journal | July 2019 |
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