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Growth of CdMnTe free of large Te inclusions using the vertical Bridgman technique

Journal Article · · Journal of Crystal Growth
 [1];  [1];  [1];  [2];  [1];  [3];  [2];  [2];  [4]
  1. Brookhaven National Lab. (BNL), Upton, NY (United States)
  2. Brookhaven National Lab. (BNL), Upton, NY (United States); Alabama A&M Univ., Normal, AL (United States)
  3. Brookhaven National Lab. (BNL), Upton, NY (United States); North Carolina State Univ., Raleigh, NC (United States)
  4. Brookhaven National Lab. (BNL), Upton, NY (United States); Savannah River National Lab., Aiken, SC (United States)
Here, we grew Cd1-xMnxTe crystals with a nominal composition of 5% Mn and 95% Cd using the vertical Bridgman technique. We were able to grow crystals from as-received starting material that were free of secondary phases, such as Te inclusions with a size > 1-µm diameter, without adding compensating Cd to the initial charge. The Te precipitations (size < 1-µm diameter) were found to segregate towards the last-to-freeze section of the ingot. Te inclusions with a size 5-7 µm were observed at the grain boundary located near the last-to-freeze section, while the bottom and middle parts of the ingot showed no Te inclusions, even at the grain boundaries. X-ray topographic analysis was used to characterize the distribution of thermal stress in the ingot.
Research Organization:
Brookhaven National Laboratory (BNL), Upton, NY (United States); Savannah River Site (SRS), Aiken, SC (United States)
Sponsoring Organization:
USDOE; USDOE National Nuclear Security Administration (NNSA), Office of Nonproliferation and Verification Research and Development (NA-22)
Grant/Contract Number:
AC09-08SR22470; SC0012704
OSTI ID:
1489339
Alternate ID(s):
OSTI ID: 1635972
OSTI ID: 1490311
Report Number(s):
BNL--210837-2019-JAAM; SRNL-STI--2018-00717
Journal Information:
Journal of Crystal Growth, Journal Name: Journal of Crystal Growth Vol. 509; ISSN 0022-0248
Publisher:
ElsevierCopyright Statement
Country of Publication:
United States
Language:
English

References (23)

Is the (Cd,Mn)Te crystal a prospective material for X-ray and ?-ray detectors? journal March 2005
Reduction of CdZnTe substrate defects and relation to epitaxial HgCdTe quality journal August 1996
Vanadium-Doped Cadmium Manganese Telluride (Cd1−x Mn x Te) Crystals as X- and Gamma-Ray Detectors journal April 2009
Zinc and selenium co-doped CdTe substrates lattice matched to HgCdTe journal January 1989
Twin-free (Cd, Mn)Te substrates journal April 1990
Infrared contrast of inclusions in CdTe journal December 1993
Study of the crystalline quality of CdTe, CdZnTe and CdMnTe substrates used for liquid phase epitaxy of Cd0.7Hg0.3Te journal May 1994
Spin-flip Raman scattering in a diluted magnetic semiconductor: Cd1−xMnxTe journal September 1982
Magnetic-field sensor using plastic optical fiber and polycrystalline CdMnTe journal September 1993
Defects in CdTe bridgman monocrystals caused by nonstoichiometric growth conditions journal March 1993
Crystal growth, fabrication and evaluation of cadmium manganese telluride gamma ray detectors journal March 1999
Modified Bridgman growth of CdTe crystals journal April 2008
Vertical Bridgman growth and characterization of CdMnTe substrates for HgCdTe epitaxy journal June 2008
Post-growth thermal annealing study of CdZnTe for developing room-temperature X-ray and gamma-ray detectors journal September 2013
Bulk growth of uniform and near stoichiometric cadmium telluride journal March 2014
Growth and characterization of CdMnTe by the vertical Bridgman technique journal March 2016
Effect of Te precipitates on the performance of CdZnTe detectors journal April 2006
Diluted magnetic semiconductors journal August 1988
Molecular beam epitaxy of diluted magnetic semiconductor (Cd 1 x Mn x Te) superlattices journal August 1984
Paramagnetic—spin-glass—antiferromagnetic phase transitions in Cd 1 − x Mn x Te from specific heat and magnetic susceptibility measurements journal October 1980
Interband Faraday rotation in diluted magnetic semiconductors: Zn 1 − x Mn x Te and Cd 1 − x Mn x Te journal November 1986
Recipe to minimize Te precipitation in CdTe and (Cd,Zn)Te crystals journal July 1992
New class of materials for optical isolators journal January 1983

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Novel Electrodes and Engineered Interfaces for Halide-Semiconductor Radiation Detectors journal July 2019

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