Thermal stability of epitaxial SrRuO₃ films as a function of oxygen pressure

Journal Article · Thu Jan 01 04:00:00 EST 2004 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.1753650· OSTI ID:931383

Lee, Ho Nyung ^[1]; Christen, Hans M ^[1]; Chisholm, Matthew F ^[1]; Rouleau, Christopher M ^[1]; Lowndes, Douglas H ^[1]

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1. ORNL

The thermal stability of electrically conducting SrRuO{sub 3} thin films grown by pulsed-laser deposition on (001) SrTiO{sub 3} substrates has been investigated by atomic force microscopy and reflection high-energy electron diffraction (RHEED) under reducing conditions (25-800 C in 10-7-10-2 Torr O{sub 2}). The as-grown SrRuO{sub 3} epitaxial films exhibit atomically flat surfaces with single unit-cell steps, even after exposure to air at room temperature. The films remain stable at temperatures as high as 720 C in moderate oxygen ambients (> 1 mTorr), but higher temperature anneals at lower pressures result in the formation of islands and pits due to the decomposition of SrRuO{sub 3}. Using in situ RHEED, a temperature and oxygen pressure stability map was determined, consistent with a thermally activated decomposition process having an activation energy of 88 kJ/mol. The results can be used to determine the proper conditions for growth of additional epitaxial oxide layers on high quality electrically conducting SrRuO{sub 3}.

• Research Organization: Oak Ridge National Laboratory (ORNL)
• Sponsoring Organization: ORNL LDRD Director's R&D; SC USDOE - Office of Science (SC)
• DOE Contract Number: AC05-00OR22725
• OSTI ID: 931383
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 20 Vol. 84; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ACTIVATION ENERGY
DECOMPOSITION
PHASE STUDIES
RUTHENIUM OXIDES
STRONTIUM OXIDES
TEMPERATURE DEPENDENCE
THIN FILMS