Synthesis and electrical behavior of VO2 thin films grown on SrRuO3 electrode layers

Zhang, Chengyang; Bisht, Ravindra Singh; Nozariasbmarz, Amin; Saha, Arnob; Han, Chan Su; Wang, Qi; Yuan, Yifan; Sengupta, Abhronil; Priya, Shashank; Ramanathan, Shriram

doi:10.1116/6.0001798

Synthesis and electrical behavior of VO₂ thin films grown on SrRuO₃ electrode layers

Journal Article · Fri Jun 17 00:00:00 EDT 2022 · Journal of Vacuum Science and Technology A

DOI:https://doi.org/10.1116/6.0001798· OSTI ID:1961586

Zhang, Chengyang ^[1]; Bisht, Ravindra Singh ^[2]; Nozariasbmarz, Amin ^[3]; Saha, Arnob ^[3]; Han, Chan Su ^[3]; Wang, Qi ^[2]; ^[2]; Sengupta, Abhronil ^[3]; Priya, Shashank ^[3]; Ramanathan, Shriram ^[2]

Purdue Univ., West Lafayette, IN (United States); Penn State University
Purdue Univ., West Lafayette, IN (United States)
Pennsylvania State Univ., University Park, PA (United States)

VO₂ thin films were grown on conducting oxide underlayer SrRuO₃ buffered SrTiO₃ (111) and Si/SiO₂ substrates, respectively, using sputtering. X-ray diffraction phi-scans revealed the epitaxial nature of the VO₂ films grown on SrRuO₃ buffered SrTiO₃ and polycrystalline structure for films grown on SrRuO₃ buffered Si/SiO₂. X-ray photoelectron spectroscopy confirms a dominant presence of V⁴⁺ in both films and establishes a high-quality growth of single-phase VO₂ films. Temperature and electric-field driven metal-insulator-transition in both the in-plane and out-of-plane configurations were investigated. Depending on the configuration, the resistance change across the metal-insulator-transition varies from a factor of 1.57–3. The measured resistance in each state as well as the magnitude of resistance change were similar during temperature and electric-field driven metal-insulator-transition. To shed light on the suppressed metal-insulator-transition characteristics due to the current shunting effect from conducting SrRuO₃ bottom electrode, a distributed resistance network model is proposed and benchmarked against reports from the literature. Here, the results demonstrate the growth of high-quality VO₂ on conducting SrRuO₃ layers and their electrical behavior, which is of particular interest for all-oxide electronic devices utilizing phase transitions such as resistive memory and neuromorphic oscillators.

View Accepted Manuscript (DOE)

Research Organization:: Pennsylvania State Univ., University Park, PA (United States)

Sponsoring Organization:: USDOE; USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC0021118

OSTI ID:: 1961586

Alternate ID(s):: OSTI ID: 1873032

Journal Information:: Journal of Vacuum Science and Technology A, Journal Name: Journal of Vacuum Science and Technology A Journal Issue: 4 Vol. 40; ISSN 0734-2101

Publisher:: American Vacuum Society / AIPCopyright Statement

Country of Publication:: United States

Language:: English

References (34)

The two components of the crystallographic transition in VO2 Goodenough, John B. Journal of Solid State Chemistry, Vol. 3, Issue 4 https://doi.org/10.1016/0022-4596(71)90091-0	journal	November 1971
Synthesis of vanadium dioxide thin films on conducting oxides and metal–insulator transition characteristics Cui, Yanjie; Wang, Xinwei; Zhou, You Journal of Crystal Growth, Vol. 338, Issue 1 https://doi.org/10.1016/j.jcrysgro.2011.10.025	journal	January 2012
Epitaxial variants of VO2 thin films on complex oxide single crystal substrates with 3m surface symmetry Wong, Franklin J.; Zhou, You; Ramanathan, Shriram Journal of Crystal Growth, Vol. 364 https://doi.org/10.1016/j.jcrysgro.2012.11.054	journal	February 2013
Abrupt metal–insulator transition observed in VO2 thin films induced by a switching voltage pulse Chae, Byung-Gyu; Kim, Hyun-Tak; Youn, Doo-Hyeb Physica B: Condensed Matter, Vol. 369, Issue 1-4 https://doi.org/10.1016/j.physb.2005.07.032	journal	December 2005
High contrast thermochromic switching in vanadium dioxide (VO2) thin films deposited on indium tin oxide substrates Beydaghyan, Gisia; Basque, Vincent; Ashrit, P. V. Thin Solid Films, Vol. 522 https://doi.org/10.1016/j.tsf.2012.07.107	journal	November 2012
Wide-Range Epitaxial Strain Control of Electrical and Magnetic Properties in High-Quality SrRuO ₃ Films Wakabayashi, Yuki K.; Kaneta-Takada, Shingo; Krockenberger, Yoshiharu ACS Applied Electronic Materials, Vol. 3, Issue 6 https://doi.org/10.1021/acsaelm.1c00288	journal	June 2021
Epitaxial Stabilization of Oxides in Thin Films Gorbenko, O. Yu.; Samoilenkov, S. V.; Graboy, I. E. Chemistry of Materials, Vol. 14, Issue 10 https://doi.org/10.1021/cm021111v	journal	October 2002
Resistance Switching in Electrodeposited VO ₂ Thin Films Koza, Jakub A.; He, Zhen; Miller, Andrew S. Chemistry of Materials, Vol. 23, Issue 18 https://doi.org/10.1021/cm2019394	journal	August 2011
Control of the metal–insulator transition in vanadium dioxide by modifying orbital occupancy Aetukuri, Nagaphani B.; Gray, Alexander X.; Drouard, Marc Nature Physics, Vol. 9, Issue 10 https://doi.org/10.1038/nphys2733	journal	September 2013
Properties of epitaxial SrRuO ₃ thin films Wu, X. D.; Foltyn, S. R.; Dye, R. C. Applied Physics Letters, Vol. 62, Issue 19 https://doi.org/10.1063/1.109388	journal	May 1993
Grain size effect on the semiconductor-metal phase transition characteristics of magnetron-sputtered VO2 thin films Brassard, D.; Fourmaux, S.; Jean-Jacques, M. Applied Physics Letters, Vol. 87, Issue 5 https://doi.org/10.1063/1.2001139	journal	August 2005
Phase transition and critical issues in structure-property correlations of vanadium oxide Narayan, J.; Bhosle, V. M. Journal of Applied Physics, Vol. 100, Issue 10 https://doi.org/10.1063/1.2384798	journal	November 2006
Role of twin boundaries in semiconductor to metal transition characteristics of VO2 films Yang, Tsung-Han; Jin, Chunming; Zhou, Honghui Applied Physics Letters, Vol. 97, Issue 7 https://doi.org/10.1063/1.3481075	journal	August 2010
Metal-insulator transition with multiple micro-scaled avalanches in VO ₂ thin film on TiO ₂ (001) substrates Kawatani, Kenichi; Takami, Hidefumi; Kanki, Teruo Applied Physics Letters, Vol. 100, Issue 17 https://doi.org/10.1063/1.4709429	journal	April 2012
Pulsed laser-deposited VO ₂ thin films on Pt layers Sakai, Joe; Zaghrioui, Mustapha; Ta Phuoc, Vinh Journal of Applied Physics, Vol. 113, Issue 12 https://doi.org/10.1063/1.4795813	journal	March 2013
Self-oscillation up to 9 MHz based on voltage triggered switching in VO ₂ /TiN point contact junctions Mian, Md. Suruz; Okimura, Kunio; Sakai, Joe Journal of Applied Physics, Vol. 117, Issue 21 https://doi.org/10.1063/1.4922122	journal	June 2015
Growth temperature-dependent metal–insulator transition of vanadium dioxide epitaxial films on perovskite strontium titanate (111) single crystals Wang, Liangxin; Yang, Yuanjun; Zhao, Jiangtao Journal of Applied Physics, Vol. 119, Issue 14 https://doi.org/10.1063/1.4945675	journal	April 2016
Thermochromic VO ₂ thin films on ITO-coated glass substrates for broadband high absorption at infra-red frequencies Rajeswaran, Bharathi; Pradhan, Jitendra K.; Anantha Ramakrishna, S. Journal of Applied Physics, Vol. 122, Issue 16 https://doi.org/10.1063/1.5008730	journal	October 2017
Control of metal-insulator transition temperature in VO ₂ thin films grown on RuO ₂ /TiO ₂ templates by strain modification Kim, H.; Charipar, N. A.; Figueroa, J. AIP Advances, Vol. 9, Issue 1 https://doi.org/10.1063/1.5083848	journal	January 2019
Electrical switching and Mott transition in VO ₂ Stefanovich, G.; Pergament, A.; Stefanovich, D. Journal of Physics: Condensed Matter, Vol. 12, Issue 41 https://doi.org/10.1088/0953-8984/12/41/310	journal	September 2000
Synthesis of vanadium dioxide thin films and nanoparticles Nag, Joyeeta; Haglund Jr, R. F. Journal of Physics: Condensed Matter, Vol. 20, Issue 26 https://doi.org/10.1088/0953-8984/20/26/264016	journal	June 2008
Photoheat-induced Schottky nanojunction and indirect Mott transition in VO ₂ : photocurrent analysis Kim, Hyun-Tak; Kim, Minjung; Sohn, Ahrum Journal of Physics: Condensed Matter, Vol. 28, Issue 8 https://doi.org/10.1088/0953-8984/28/8/085602	journal	February 2016
Role of thermal strain in the metal-insulator and structural phase transition of epitaxial VO 2 films Théry, V.; Boulle, A.; Crunteanu, A. Physical Review B, Vol. 93, Issue 18 https://doi.org/10.1103/PhysRevB.93.184106	journal	May 2016
Oxides Which Show a Metal-to-Insulator Transition at the Neel Temperature Morin, F. J. Physical Review Letters, Vol. 3, Issue 1 https://doi.org/10.1103/PhysRevLett.3.34	journal	July 1959
Excellent Selector Characteristics of Nanoscale $ \hbox{VO}_{2}$ for High-Density Bipolar ReRAM Applications Son, Myungwoo; Lee, Joonmyoung; Park, Jubong IEEE Electron Device Letters, Vol. 32, Issue 11 https://doi.org/10.1109/LED.2011.2163697	journal	November 2011
Voltage-Triggered Ultrafast Phase Transition in Vanadium Dioxide Switches Zhou, You; Chen, Xiaonan; Ko, Changhyun IEEE Electron Device Letters, Vol. 34, Issue 2 https://doi.org/10.1109/LED.2012.2229457	journal	February 2013
Initiation of switching in VO ₂ coplanar devices Duchene, J. C.; Terraillon, M. M.; Pailly, M. IEEE Transactions on Electron Devices, Vol. 18, Issue 12 https://doi.org/10.1109/T-ED.1971.17347	journal	December 1971
VO ₂ Phase-Transition-Based Vertical MEMS Microactuators Huang, Chengzi; Zhang, Zhen; Ramanathan, Shriram IEEE Transactions on Electron Devices, Vol. 66, Issue 10 https://doi.org/10.1109/TED.2019.2937683	journal	October 2019
Magnetic Skyrmion as a Spintronic Deep Learning Spiking Neuron Processor Chen, Mei-Chin; Sengupta, Abhronil; Roy, Kaushik IEEE Transactions on Magnetics, Vol. 54, Issue 8 https://doi.org/10.1109/TMAG.2018.2845890	journal	August 2018
Sputter deposition of thermochromic VO ₂ films on In ₂ O ₃ :Sn, SnO ₂ , and glass: Structure and composition versus oxygen partial pressure Montero, José; Ji, Yu-Xia; Li, Shu-Yi Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, Vol. 33, Issue 3 https://doi.org/10.1116/1.4918714	journal	May 2015
Characterization of VO ₂ /ferroelectric thin film heterostructures deposited on various complex oxide single crystal substrates Petraru, Adrian; Droopad, Ravi; Kohlstedt, Hermann Journal of Vacuum Science & Technology A, Vol. 37, Issue 2 https://doi.org/10.1116/1.5082288	journal	March 2019
Electric-Field-Induced Multistep Resistance Switching in Planar VO ₂ / c -Al ₂ O ₃ Structure Okimura, Kunio; Ezreena, Nurul; Sasakawa, Yusuke Japanese Journal of Applied Physics, Vol. 48, Issue 6 https://doi.org/10.1143/JJAP.48.065003	journal	June 2009
Substrate temperature dependence of structure and resistivity of SrRuO ₃ thin films grown by pulsed laser deposition on (100) SrTiO ₃ Zakharov, N. D.; Satyalakshmi, K. M.; Koren, G. Journal of Materials Research, Vol. 14, Issue 11 https://doi.org/10.1557/JMR.1999.0593	journal	November 1999
Investigation of Statistical Metal-Insulator Transition Properties of Electronic Domains in Spatially Confined VO2 Nanostructure Hattori, Azusa N.; Osaka, Ai I.; Hattori, Ken Crystals, Vol. 10, Issue 8 https://doi.org/10.3390/cryst10080631	journal	July 2020

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