Seeded Growth of AlN Crystals on Non-Polar Seeds Via Physical Vapor Transport
Seeded growth of AlN single crystals was demonstrated in an induction-heated, high-temperature reactor via a physical vapor transport (PVT) process. AlN seeds were prepared from a self-seeded boule containing large single-crystalline grains. Seeded growth was interrupted several times in order to refill the AlN powder source, and a dedicated process scheme was used to ensure epitaxial growth on the seed surface, after prior exposure to air. The growth temperatures were in the range of 2200-2300 C, and the reactor pressure was in the range of 500-900 torr of UHP-grade nitrogen during each growth run. Under these growth conditions, a seed (10 mm diameter) expanded at an angle of 45{sup o}, and a larger single crystal up to 18 mm in diameter was obtained. The as-grown surface had three facets, of which facet (1120) was smooth and featureless while the other two, (4150) and (2570), showed serrated morphologies. The double-crystal x-ray rocking curve and glow discharge mass spectroscopy analysis confirmed that the grown crystal was of high crystalline quality with low impurity incorporation.
- Research Organization:
- Brookhaven National Lab. (BNL), Upton, NY (United States). National Synchrotron Light Source
- Sponsoring Organization:
- Doe - Office Of Science
- DOE Contract Number:
- DE-AC02-98CH10886
- OSTI ID:
- 929838
- Report Number(s):
- BNL-80402-2008-JA; JECMA5; TRN: US200822%%907
- Journal Information:
- Journal of Electronic Materials, Vol. 35; ISSN 0361-5235
- Country of Publication:
- United States
- Language:
- English
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