Seeded Growth of AlN Bulk Crystals in m- and c-orientation
Seeded growth of AlN boules was achieved on m-(1 0 1{sup -} 0) and c-(0 0 0 1{sup -}) orientations by physical vapor transport (PVT). The single crystalline m- and c-plane seeds were cut from freestanding AlN single crystals. AlN boules 12 mm in diameter and 7 mm in height were grown at source temperatures around 2280 C in N{sub 2} atmosphere at 500 Torr of total pressure. Under identical process conditions, the m- and c-plane boules exhibited the same growth rates, 150-170 {micro}m/h, and similar expansion angles, 22-27{sup o}, which indicated that the growth was controlled by the thermal profile inside the crucible rather than by crystallographic differences. X-ray rocking curve analysis and Raman spectroscopy confirmed that both m- and c-plane grown crystals possessed high crystalline quality. The dislocation density in both crystals was non-uniform and in the range 102-105 cm{sup -2}, as characterized by X-ray topography.
- Research Organization:
- Brookhaven National Lab. (BNL), Upton, NY (United States). National Synchrotron Light Source
- Sponsoring Organization:
- DOE - OFFICE OF SCIENCE
- DOE Contract Number:
- DE-AC02-98CH10886
- OSTI ID:
- 1019694
- Report Number(s):
- BNL-95540-2011-JA; JCRGAE; TRN: US201115%%334
- Journal Information:
- Journal of Crystal Growth, Vol. 312, Issue 1; ISSN 0022-0248
- Country of Publication:
- United States
- Language:
- English
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