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Resistivity control in unintentionally-doped GaN films grown by MOCVD.

Journal Article · Thu May 01 00:00:00 EDT 2003 · Proposed for publication in Journal of Crystal Growth.

OSTI ID:927650

Henry, Robert L ^[1]; Koleske, Daniel David; Twigg, Mark E ^[1]; Wickenden, Alma E ^[2]; Fatemi, Mohammad ^[1]

Naval Research Laboratory, Washington, DC
US Army Research Laboratory, Adelphi, MD

No abstract prepared.

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Research Organization:: Sandia National Laboratories

Sponsoring Organization:: USDOE

DOE Contract Number:: AC04-94AL85000

OSTI ID:: 927650

Report Number(s):: SAND2003-2202J

Journal Information:: Proposed for publication in Journal of Crystal Growth., Journal Name: Proposed for publication in Journal of Crystal Growth.

Country of Publication:: United States

Language:: English

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Related Subjects

36 MATERIALS SCIENCE
CHEMICAL VAPOR DEPOSITION
DOPED MATERIALS
ELECTRIC CONDUCTIVITY
GALLIUM NITRIDES
PROCESS CONTROL