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MOCVD growth of InGaN:Mg for GaN/InGaN hbts

Journal Article · Tue Dec 14 23:00:00 EST 2004 · Physica Status Solidi (C)

OSTI ID:841972

Chung, T ^[1]; Limb, J -B; Chowdhury, U; Li, P; Ryou, J -H; Yoo, D; Zakharov, D; Liliental- Weber, Z; Dupuis, R D

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Research Organization:: Ernest Orlando Lawrence Berkeley National Laboratory, Berkeley, CA (US)

Sponsoring Organization:: US Department of Energy (US)

DOE Contract Number:: AC03-76SF00098

OSTI ID:: 841972

Report Number(s):: LBNL--58224

Journal Information:: Physica Status Solidi (C), Journal Name: Physica Status Solidi (C) Journal Issue: 7 Vol. 2

Country of Publication:: United States

Language:: English

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Related Subjects

36 MATERIALS SCIENCE
CHEMICAL VAPOR DEPOSITION
GALLIUM NITRIDES
INDIUM NITRIDES
MAGNESIUM