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Relation between structural parameters and the effective electron-hole separation in InGaN/GaN quantum wells

Journal Article · Fri Jun 22 00:00:00 EDT 2001 · Physica Status Solidi B

DOI:https://doi.org/10.1002/1521-3951(200111)228:1<147::AID-PSSB147>3.0.CO;2-N· OSTI ID:793794

Shapiro, N A ^[1]; Feick, H; Gardner, N F; Goetz, W K; Waltereit, P; Speck, J S; Weber, E R

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Research Organization:: Ernest Orlando Lawrence Berkeley National Lab., CA (US)

Sponsoring Organization:: DOD MURI N00014-99-1-0729 (US)

DOE Contract Number:: AC03-76SF00098

OSTI ID:: 793794

Report Number(s):: LBNL--49825

Journal Information:: Physica Status Solidi B, Journal Name: Physica Status Solidi B Journal Issue: 1 Vol. 228

Country of Publication:: United States

Language:: English

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Related Subjects

36 MATERIALS SCIENCE
ELECTRONIC STRUCTURE
GALLIUM NITRIDES
HOLES
INDIUM NITRIDES
MICROSTRUCTURE