Phase separation in InGaN/GaN multiple quantum wells
- Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, California94304 (United States)
- Stanford Synchrotron Radiation Laboratory, Menlo Park, California94309 (United States)
Evidence is presented for phase separation in In{sub 0.27}Ga{sub 0.73}N/GaN multiple quantum wells. After annealing for 40 h at a temperature of 950{degree}C, the absorption threshold at 2.95 eV is replaced by a broad peak at 2.65 eV. This peak is attributed to the formation of In-rich InGaN phases in the active region. X-ray diffraction measurements show a shift in the diffraction peaks toward GaN, consistent with the formation of an In-poor phase. A diffraction peak corresponding to an In-rich phase is also present in the annealed material. Nanoscale In-rich InGaN precipitates are observed by transmission electron microscopy and energy dispersive x-ray chemical analysis. {copyright} {ital 1998 American Institute of Physics.}
- OSTI ID:
- 624844
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 14 Vol. 72; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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