Defects in p-doped Bulk GaN crystals grown with Ga polarity
Journal Article
·
· Journal of Crystal Growth
No abstract prepared.
- Research Organization:
- Ernest Orlando Lawrence Berkeley NationalLaboratory, Berkeley, CA (US)
- Sponsoring Organization:
- USDOE Director, Office of Science
- DOE Contract Number:
- AC02-05CH11231
- OSTI ID:
- 929082
- Report Number(s):
- LBNL--58227
- Journal Information:
- Journal of Crystal Growth, Journal Name: Journal of Crystal Growth Vol. 281; ISSN 0022-0248; ISSN JCRGAE
- Country of Publication:
- United States
- Language:
- English
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