Role of Defect Sites and Ga Polarization in the Magnetism of Mn-Doped GaN
Journal Article
·
· Physical Review Letters
No abstract prepared.
- Research Organization:
- Advanced Photon Source (APS), Argonne National Laboratory (ANL), Argonne, IL (US); Univ. of Wisconsin
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC02-06CH11357
- OSTI ID:
- 898658
- Journal Information:
- Physical Review Letters, Journal Name: Physical Review Letters Journal Issue: 25 Vol. 95; ISSN 0031-9007; ISSN PRLTAO
- Publisher:
- American Physical Society (APS)
- Country of Publication:
- United States
- Language:
- English
Similar Records
Defects in p-doped Bulk GaN crystals grown with Ga polarity
The effect of Ga vacancies on the defect and magnetic properties of Mn-doped GaN
Extended defects and polarity of hydride vapor phase epitaxy GaN
Journal Article
·
Tue Apr 26 00:00:00 EDT 2005
· Journal of Crystal Growth
·
OSTI ID:929082
The effect of Ga vacancies on the defect and magnetic properties of Mn-doped GaN
Journal Article
·
Mon Oct 15 00:00:00 EDT 2007
· Journal of Applied Physics
·
OSTI ID:21064413
Extended defects and polarity of hydride vapor phase epitaxy GaN
Journal Article
·
Mon Apr 29 00:00:00 EDT 2002
· Journal of Electronic Materials
·
OSTI ID:821631