Defect Doping of InN
Conference
·
OSTI ID:927385
InN films grown by molecular beam epitaxy have been subjected to 2 MeV He{sup +} irradiation followed by thermal annealing. Theoretical analysis of the electron mobilities shows that thermal annealing removes triply charged donor defects, creating films with electron mobilities approaching those predicted for uncompensated, singly charged donors. Optimum thermal annealing of irradiated InN can be used to produce samples with electron mobilities higher than those of as grown films.
- Research Organization:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Sponsoring Organization:
- USDOE Director. Office of Science. Basic EnergySciences
- DOE Contract Number:
- DE-AC02-05CH11231
- OSTI ID:
- 927385
- Report Number(s):
- LBNL-63011; R&D Project: 513360; BnR: KC0201030; TRN: US200811%%133
- Resource Relation:
- Conference: 26th International Conference on the Physics ofSemiconductors (ICPS-26), Vienna, Austria, July 22-26,2006
- Country of Publication:
- United States
- Language:
- English
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